Pregled bibliografske jedinice broj: 188145
Effects of Light Soaking on Amorphous Silicon Thin Films
Effects of Light Soaking on Amorphous Silicon Thin Films // Proceedings of 19th European Photovoltaic Solar Energy Conference / Bal, J.-L. ; Silvestrini, G. ; Grassi, A. ; Palz, W. ; Vigotti, R. ; Gamberale, M. ; Helm, P. (ur.).
München: WIP-Munich, Sylveinsteinstr. 2, D-81369 Muenchen, 2004, 2004. str. 1530-1532 (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
Effects of Light Soaking on Amorphous Silicon Thin Films
Autori
Pivac, Branko ; Kovačević, Ivana ; Zulim, Ivan
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of 19th European Photovoltaic Solar Energy Conference
/ Bal, J.-L. ; Silvestrini, G. ; Grassi, A. ; Palz, W. ; Vigotti, R. ; Gamberale, M. ; Helm, P. - München : WIP-Munich, Sylveinsteinstr. 2, D-81369 Muenchen, 2004, 2004, 1530-1532
Skup
19th European Photovoltaic Solar Energy Conference
Mjesto i datum
Pariz, Francuska, 07.06.2004. - 11.06.2004
Vrsta sudjelovanja
Poster
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
a-Si; defects; light-soaking
Sažetak
The effect of light soaking on a-Si:H films is well known as the Staebler-Wronski effect, though its complete mechanism is not yet clear. The effect of light soaking with UV light on defects creating deep levels influence of hydrogen presence on such defects in intrinsic a-Si:H films was studied. The defects were investigated by current deep level transient spectroscopy (I-DLTS) and infrared spectroscopy (IR) measurements. It is found that UV light caused minor Si-H bond-breaking and hydrogen redistribution affects present oxygen.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
