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Pregled bibliografske jedinice broj: 187910

Synchrotron X-Ray Topographic Analysis of the Impact of Processing Steps on the Fabrication of AlGaAs/InGaAs p-HEMT's

McNally, Patrick J.; Tuomi, T.; Herbert, P.A.F.; Barić, Adrijan; Ayras, A.; Karilahti, M.; Lipsanen, H.; Tromby, M.
Synchrotron X-Ray Topographic Analysis of the Impact of Processing Steps on the Fabrication of AlGaAs/InGaAs p-HEMT's // IEEE transactions on electron devices, 43 (1996), 6; 1085-1091 doi:10.1109/16.502419 (međunarodna recenzija, članak, znanstveni)

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Naslov
Synchrotron X-Ray Topographic Analysis of the Impact of Processing Steps on the Fabrication of AlGaAs/InGaAs p-HEMT's

Autori
McNally, Patrick J. ; Tuomi, T. ; Herbert, P.A.F. ; Barić, Adrijan ; Ayras, A. ; Karilahti, M. ; Lipsanen, H. ; Tromby, M.

Izvornik
IEEE transactions on electron devices (0018-9383) 43 (1996), 6; 1085-1091

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Synchrotron X-Ray topography ; HEMT ; Stress ; Defects

Sažetak
X-Ray Topography (SXRT) has been uniquely applied to nondestructively reveal and evaluate the dam¬ ; ; age throughout the depth of the wafer, caused by the deposition of source/gate/drain metallization and of so-called "passivation" dielectric layers on power AlGaAs/InGaAs pseudo¬ ; ; morphic HEMT's. Device metallization is visible due to the stress imposed on the underlying substrate and is detected as a strain field by SXRT. Experimental results are in good agreement with simulation. The quality and detail of the initial control topographs disappear when the Si3N4 dielectric layer is deposited. This is believed due to the passivating layer introducing such strain into the crystal that it overwhelms the metallization strain, in addition to producing a significant amount of stress-induced defect and dislocation generation.

Izvorni jezik
Engleski



POVEZANOST RADA

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Adrijan Barić (autor)

Poveznice na cjeloviti tekst rada:

doi ieeexplore.ieee.org

Citiraj ovu publikaciju:

McNally, Patrick J.; Tuomi, T.; Herbert, P.A.F.; Barić, Adrijan; Ayras, A.; Karilahti, M.; Lipsanen, H.; Tromby, M.
Synchrotron X-Ray Topographic Analysis of the Impact of Processing Steps on the Fabrication of AlGaAs/InGaAs p-HEMT's // IEEE transactions on electron devices, 43 (1996), 6; 1085-1091 doi:10.1109/16.502419 (međunarodna recenzija, članak, znanstveni)
McNally, P., Tuomi, T., Herbert, P., Barić, A., Ayras, A., Karilahti, M., Lipsanen, H. & Tromby, M. (1996) Synchrotron X-Ray Topographic Analysis of the Impact of Processing Steps on the Fabrication of AlGaAs/InGaAs p-HEMT's. IEEE transactions on electron devices, 43 (6), 1085-1091 doi:10.1109/16.502419.
@article{article, author = {McNally, Patrick J. and Tuomi, T. and Herbert, P.A.F. and Bari\'{c}, Adrijan and Ayras, A. and Karilahti, M. and Lipsanen, H. and Tromby, M.}, year = {1996}, pages = {1085-1091}, DOI = {10.1109/16.502419}, keywords = {Synchrotron X-Ray topography, HEMT, Stress, Defects}, journal = {IEEE transactions on electron devices}, doi = {10.1109/16.502419}, volume = {43}, number = {6}, issn = {0018-9383}, title = {Synchrotron X-Ray Topographic Analysis of the Impact of Processing Steps on the Fabrication of AlGaAs/InGaAs p-HEMT's}, keyword = {Synchrotron X-Ray topography, HEMT, Stress, Defects} }
@article{article, author = {McNally, Patrick J. and Tuomi, T. and Herbert, P.A.F. and Bari\'{c}, Adrijan and Ayras, A. and Karilahti, M. and Lipsanen, H. and Tromby, M.}, year = {1996}, pages = {1085-1091}, DOI = {10.1109/16.502419}, keywords = {Synchrotron X-Ray topography, HEMT, Stress, Defects}, journal = {IEEE transactions on electron devices}, doi = {10.1109/16.502419}, volume = {43}, number = {6}, issn = {0018-9383}, title = {Synchrotron X-Ray Topographic Analysis of the Impact of Processing Steps on the Fabrication of AlGaAs/InGaAs p-HEMT's}, keyword = {Synchrotron X-Ray topography, HEMT, Stress, Defects} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus

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