Naslov
Modelling the effects of piezoelectrically active defects and their impact on the threshold voltage of GaAs metal-semiconductor field effect transistors

Autori
Barić, Adrijan ; McNally, Patrick J. ; McCaffrey, J.K.

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies EXMATEC '94, Materials Science and Engineering vol. 28 / Fornari, Roberto - , 1994, 248-252

Skup
2nd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies EXMATEC '94

Mjesto i datum
Parma, Italija, 18.05.1994. - 20.05.1994

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
defects ; gallium arsenide ; piezoelectric ; metal-semiconductor field effect transistors

Sažetak
In this paper we discuss the effects of residual structural crystal defects on the threshold voltage VT of GaAs metal-semiconductor field effect transistors via piezoelectric charge distributions set up around individual point defects. This represents a "first-cut" effort to elucidate the piezoelectric impact of defects/dislocations in a GaAs substrate and their subsequent device characteristic alterations. VT shifts ∆ VT associated with the edge, screw and 60° types of defects are modelled using a simple one-dimensional calculation of the moment arm of the induced charge distribution. Such calculations are in line with experimental evidence and show for the first time that the piezoelectric impact, even of point defect structures, is significant (i.e. ∆ VT of the order of tens of millivolts from an individual defect ).

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA