Pregled bibliografske jedinice broj: 177296
Depolarization crossovers in the microwave response of silicon crystals in slab geometry
Depolarization crossovers in the microwave response of silicon crystals in slab geometry // Fizika A (Zagreb), 15 (2006), 25-34 (podatak o recenziji nije dostupan, članak, znanstveni)
CROSBI ID: 177296 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Depolarization crossovers in the microwave response of silicon crystals in slab geometry
Autori
Babić, Bakir ; Basletić, Mario ; Dulčić, Antonije ; Požek, Miroslav
Izvornik
Fizika A (Zagreb) (1330-0008) 15
(2006);
25-34
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
depolarization crossover; microwave; silicon
Sažetak
Microwave cavity perturbation measurements have been performed on several n-type silicon samples with different depolarization factors due to sample geometries. The general solution for the complex frequency shift in slab geometry was discussed for the specific case of semiconductors. The depolarization crossovers predicted by the theory have been experimentally observed. Their relative intensities suggest that the imaginary part of the complex conductivity of semiconductors has to be taken into account. Electron scattering time has been infered from the microwave measurements.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Prirodoslovno-matematički fakultet, Zagreb
Citiraj ovu publikaciju:
Uključenost u ostale bibliografske baze podataka::
- The INSPEC Science Abstracts series
