Pregled bibliografske jedinice broj: 17723
Structural and electronic properties of vanadium ultra-thin films on Cu(100)
Structural and electronic properties of vanadium ultra-thin films on Cu(100) // Surface science, 397 (1998), 1-3; 270-277 doi:10.1016/S0039-6028(97)00743-7 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 17723 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Structural and electronic properties of vanadium ultra-thin films on Cu(100)
Autori
Pervan, Petar ; Valla, Tonica ; Milun, Milorad
Izvornik
Surface science (0039-6028) 397
(1998), 1-3;
270-277
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
Angular-resolved photoemlsslon spectroscopy (ARUPS); Copper; Ultra-thin films; Vanadmm
Sažetak
The growth mode, structural and electronic properties of vanadium ultra-thin films deposited on Cu(100) at room temperature were studied by means of Auger electron spectroscopy, low energy electron diffraction and angular-resolved photoemlsslon The results of all measurements are consistent with a plctm'e of slmultaneous multdayer growth of vanadium showing bcc-(110) structure The normal emission UP spectra of the valence band region show a systematic increase of the intensity at the Fermi level with the increasing vanadium concentration on the copper surface There are two mechanisms which can account for this intensity. In the limit of very small vanadium concentration, a vanadium virtual bound state is probably a dominant contribution At higher concentration, the quasl-3D-(110)-like structure is formed and the transition from the El band, lying just below the Fermi level, is the dominant process contributing to the intensity at the Fermi level. Thermal stablhty of vanadium films and the copper segregation were also studied.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus