Pregled bibliografske jedinice broj: 1762
Electron paramagnetic Resonance Study of Amorphous Silicon Produced by Kr^+ Ion Implantation into Silicon
Electron paramagnetic Resonance Study of Amorphous Silicon Produced by Kr^+ Ion Implantation into Silicon // Journal of applied physics, 81 (1997), 8; 3453-3456 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 1762 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Electron paramagnetic Resonance Study of Amorphous Silicon Produced by Kr^+ Ion Implantation into Silicon
Autori
Rakvin, Boris ; Pivac, Branko ; Reitano, R.
Izvornik
Journal of applied physics (0021-8979) 81
(1997), 8;
3453-3456
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
EPR; amorphous silicon; ion implantation; defects
Sažetak
A detailed analysis of the electon paramagnetic resonance line shape was performed on amorphous Si samples obtained by Kr+ ion implantation. The Lorentzian character and behavior upon annealing was explained via a strong exchange interaction, leading to a cluster model for the spin density distribution. The saturation measurements are shown to be a convenient method to study structural changes caused by thermal annealing. The spin density distribution (as described with the cluster model) imposes a clear difference between amorphous Si material obtained by ion implantation and one obtained by evaporation and/or chemical vapor deposition.
Izvorni jezik
Engleski
Znanstvena područja
Fizika, Kemija
POVEZANOST RADA
Ustanove:
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
