Naslov
Characterization of Ge islands on Si (100) substrates

Autori
Kovačević, Ivana ; Dubček, Pavo ; Zorc, Hrvoje ; Radić, Nikola ; Pivac, Branko ; Bernstorff, Sigrid

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Izvornik
Program and Book of Anstracts / Mozetić, M. ; Šetina, J. ; Kovač, J. - Ljubljana : Infokart, 2004

Skup
10th Joint Vacuum Conference

Mjesto i datum
Portorož, Slovenija, 28.09.2004. - 02.10.2004

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
silicon; germanium; nanostructures;

Sažetak
We present a preliminary study of Ge islands formation on Si(100) substrates using grazing-incidence small-angle X-ray scattering (GISAXS). Samples were prepared by a high-vacuum evaporation of a 5nm thick Ge layer on Si(100) substrate held at 200  C. The samples were subsequently annealed at different temperatures for 1h in vacuum, yielding to island formation. A Fortran program IsGISAXS was used for the simulation and analysis of Ge islands. Vertical cut (perpendicular to the surface) of the experimental 2D GISAXS pattern has been fitted using a Guinier approximation. Obtained parameters were used for the simulations. The simulated 2D GISAXS pattern well reproduce experimental data for cylindrically shaped islands with morphological parameters R=4 nm, H/R= 0.25 and the average inter-island distance D=5 nm.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA