Pregled bibliografske jedinice broj: 16923
A simple One-Dimensional Model for the Explanation and Analysis of GaAs MESFET Behavior
A simple One-Dimensional Model for the Explanation and Analysis of GaAs MESFET Behavior // IEEE Transactions on education, 41 (1998), 3; 219-223 doi:10.1109/13.704550 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 16923 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
A simple One-Dimensional Model for the Explanation and Analysis of GaAs MESFET Behavior
Autori
Barić, Adrijan ; McNally, Patrick
Izvornik
IEEE Transactions on education (0018-9359) 41
(1998), 3;
219-223
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
Gallium arsenide (GaAs) modeling; I-V characteristic; metal-semiconductor
Sažetak
The explanation of GaAs metal-semiconductor field-effect transistor (MESFET) operation often involves the use of simplistic analytical formulas, which serve to obscure the more subtle physics of device action. We consider here a simple one-dimensional (1-D) model for GaAs MESFETs, which avoids more confusing numerical modeling schemes, yet still facilitates an analysis of the physical functionality of the device. The model takes into account current saturation due to either velocity saturation of channel pinch-off, the modulation of effective gate length, and the series resistance of the regions beyond the gate. The results of the model have been compared to experimental data readily obtained from the literature, and the agreement has been shown to be good.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
036001
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
Profili:
Adrijan Barić
(autor)
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
