Pregled bibliografske jedinice broj: 167355
Radiation damage microstructures in silicon and applications in charged particle detection
Radiation damage microstructures in silicon and applications in charged particle detection // Book of Abstracts / Jakšić, Milko ; Fazinić, Stjepko ; Medunić, Zvonko ; Bogdanović Radović, Iva (ur.).
Zagreb: Institut Ruđer Bošković, 2004. (predavanje, nije recenziran, sažetak, znanstveni)
CROSBI ID: 167355 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Radiation damage microstructures in silicon and applications in charged particle detection
Autori
Jakšić, Milko ; Medunić, Zvonko ; Skukan, Natko
Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni
Izvornik
Book of Abstracts
/ Jakšić, Milko ; Fazinić, Stjepko ; Medunić, Zvonko ; Bogdanović Radović, Iva - Zagreb : Institut Ruđer Bošković, 2004
Skup
9th International Conference on Nuclear Microprobe Technology and Applications
Mjesto i datum
Cavtat, Hrvatska, 13.09.2004. - 17.09.2004
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Nije recenziran
Ključne riječi
focused ion beam; TRIBIC
Sažetak
Development of the digital signal processing introduces ability to recognize a small variation of pulse shapes from the preamplifier connected to semiconductor radiation detectors. Pulse shape is determined by the charge collection properties (mobility, lifetime of charge carriers and electric field) of detection device, as well as the nature of interaction between radiation and detector material. By using MeV ions of different range (z), damaged regions in semiconductor detector may be created at selected positions (xy). In such a way, charge collection properties and therefore the response of the detector will be different in respect to its undamaged part. Different structures of the damaged regions can be produced with correlation of pulse shape and range or position of detected charged particles. Radiation damage is easily created at the certain depth and position using focused ion beam of desired energy and range using nuclear microprobe facility. Such process can be simultaneously controlled, performing on line TRIBIC (Time resolved ion beam induced charge) measurements. In this work we present application possibilities of the different 3D radiation damage structures created in a simple silicon pin diodes. Some of them may be the basis for the development of new and simple position (range) sensitive detectors.
Izvorni jezik
Engleski
Znanstvena područja
Psihologija