Naslov
GISAXS study of hydrogen implanted silicon

Autori
Pivac, Branko ; Dubček, Pavo ; Bernstorff, Sigrid ; Corni, Federico ; Tonini, Rita

Izvornik
Journal of alloys and compounds (0925-8388) 382 (2004), 1-2; 75-77

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
semiconductors; crystal structure; X-ray spectroscopies; ion implantation

Sažetak
The grazing incidence small angle X-ray scattering (GISAXS) technique was used to study monocrystalline silicon samples implanted with H2 ions at an energy of 31 keV and to the dose of 1016 ions/cm2. Samples were annealed isochronally at different temperatures. Although the H depth distribution was expected to be smooth initially, nanosized features, like agglomerates of defects, have been detected. Annealing destroys this feature due to the relaxation of defects, i.e. redistribution of vacancies and hydrogen. Above 300 ◦ C a well defined film with highly correlated borders is formed on the edge of the layer rich in defects, whose thickness is slowly decreasing from 25 to 22 nm with increasing annealing temperature. Moreover, defects as well as hydrogen are migrating towards the surface with increasing annealing temperature, as indicated by the increase in surface roughness.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

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