Naslov
The Influence of Temperature on Lifetime

Autori
Divković-Pukšec, Julijana

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of MELECON ´98, Vol. I / Baal-Schem, Jacob - Tel Aviv : Institute of Electrical and Electronics Engineers (IEEE), 1998, 349-353

Skup
MELECON ´98 - 9th Mediterranean Electrotechnical Conference

Mjesto i datum
Tel Aviv, Izrael, 18.05.1998. - 20.05.1998

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
recombination center; gold; deep energy level; lifetime; capture coefficient

Sažetak
Recombination by the means of a deep center determines the lifetime of electrons and holes. Recombination process depends, mostly, on a recombination center; its density and capturing capability. In this work the influence of temperature on capture coefficients of gold (as deep recombination center in silicon) is considered. The lifetime of a hole in an n-type silicon is calculated. Only one energy level of gold is examined, Shockley-Read-Hall, as well as, Auger recombinations are taken into account. Calculated lifetimes are compared with experimentally obtained values. On the basis of this comparison it can be concluded that capture coefficients of a deep recombination center depend on temperature; temperature dependence on a capture cross section, *, can be described as *T -2.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

POVEZANOST RADA