Pregled bibliografske jedinice broj: 159462
Thermally Stimulated Currents Measurements on Semi-Insulating GaN Thin Films
Thermally Stimulated Currents Measurements on Semi-Insulating GaN Thin Films // Program and book of abstracts of the 10th Joint Vacuum Conference / Mozetić, M. ; Šetina, J. ; Kovač, J. (ur.).
Ljubljana: Infokart, 2004. str. 77-77 (poster, međunarodna recenzija, sažetak, znanstveni)
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Naslov
Thermally Stimulated Currents Measurements on Semi-Insulating GaN Thin Films
Autori
Pavlović, Mladen ; Desnica, Uroš ; Fang, Zhaobang ; Look, David
Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni
Izvornik
Program and book of abstracts of the 10th Joint Vacuum Conference
/ Mozetić, M. ; Šetina, J. ; Kovač, J. - Ljubljana : Infokart, 2004, 77-77
Skup
10th Joint Vacuum Conference
Mjesto i datum
Portorož, Slovenija, 28.09.2004. - 02.10.2004
Vrsta sudjelovanja
Poster
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
Thermally stimulated currents; GaN; thin film
Sažetak
Thermally Stimulated Currents Measurements (TSC) was used in the study of deep levels in semi-insulating GaN thin film samples, grown on sapphire by the molecular beam epitaxy. Prior to the standard TSC measurements samples were subjected to "thermal cleaning procedure" at certain temperatures in 98 - 250 K range. So obtained TSC spectra were all successfully fitted by the Simultaneous multiple peak analysis method (SIMPA), using the same set of deep levels with activation energies between 0.09 and 0.60 eV, differing only in relative concentrations.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Napomena
Vacuum (0042-207X) ; 80 (1/3) (2005), 1-2
POVEZANOST RADA
Ustanove:
Institut "Ruđer Bošković", Zagreb