Pregled bibliografske jedinice broj: 159437
Thermally Stimulated Currents on InSe Semiconductor
Thermally Stimulated Currents on InSe Semiconductor // Book 2, Poster Sessions, IVC-16, ICSS-12, NANO-8, AIV-17 / / Borello, G.P. ; Campani, M. (ur.).
Venecija, 2004. (poster, međunarodna recenzija, sažetak, ostalo)
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Naslov
Thermally Stimulated Currents on InSe Semiconductor
Autori
Etlinger, Božidar ; Pavlović, Mladen
Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, ostalo
Izvornik
Book 2, Poster Sessions, IVC-16, ICSS-12, NANO-8, AIV-17 /
/ Borello, G.P. ; Campani, M. - Venecija, 2004
Skup
IVC-16, ICSS-12, NANO-8, AIV-17
Mjesto i datum
Venecija, Italija, 28.06.2004. - 02.07.2004
Vrsta sudjelovanja
Poster
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
Thermally Stimulated Currents; semiconductor; InSe
Sažetak
Polycrystalline samples of InSe are obtained by syntesis in vacuum at 850 C. In order to determine defects in forbidden enery gap we have measured thermally stimulated currents (TSC) on InSe samples in temperature interval between 80 and 400 K. Energy of deep level defect was calculated as ET=(0.65+-0.02) eV, which is in agreement with previous result of DLTS of 0.64 eV. Configuration model of such deep level defect is to be further investigated.
Izvorni jezik
Engleski
Znanstvena područja
Fizika