Naslov
Investigation of S2 Defect in H implanted CZ-Si by EPR

Autori
Rakvin, Boris ; Pivac, Branko ; Tonini, R. ; Corni, F. ; Ottaviani, G.

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Magnetic resonance and related phenomena / Dieter Ziessow, Wolfgang Lubitz, Fridhelm Lendzian - Berlin : Technische Universitat Berlin, 1998, 1103-1104

Skup
Joint 29th AMPERE and 13th ISMAR International Conference

Mjesto i datum
Berlin, Njemačka, 02.08.1998. - 07.08.1998

Vrsta sudjelovanja
Poster

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
EPR; silicon; hydrogen related defects

Sažetak
Electron paramagnetic resonance spectra of S2 paramagnetic center in Czochralski silicon (CZ-Si) produced by H2+ ion implantation and by subsequent annealing have been studied. At room temperature the spectrum exhibits an isotropic line g=2.0066, which, then broadens and splits into an anisotropic spectrum at 120 K. From the g tensor evaluated at 120 K, it has been deduced that the spectrum originated from the center with triclinic symmetry. The involvement of hydrogen atoms in the center has been discussed.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Kemija

POVEZANOST RADA