Pregled bibliografske jedinice broj: 15435
Energy Balance Simulation of Submicromter Si n-MOSFETs
Energy Balance Simulation of Submicromter Si n-MOSFETs // Proceedings of MELECON ´98, Vol. I / Baal-Schem, Jacob (ur.).
Tel Aviv: Institute of Electrical and Electronics Engineers (IEEE), 1998. str. 354-357 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 15435 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Energy Balance Simulation of Submicromter Si n-MOSFETs
Autori
Butković, Željko ; Barić, Adrijan
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of MELECON ´98, Vol. I
/ Baal-Schem, Jacob - Tel Aviv : Institute of Electrical and Electronics Engineers (IEEE), 1998, 354-357
Skup
MELECON ´98 - 9th Mediterranean Electrotechnical Conference
Mjesto i datum
Tel Aviv, Izrael, 18.05.1998. - 20.05.1998
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
sumicrometer MOSFET; energy balance model; transconductance; velocity overshoot
Sažetak
This work discusses the results of simulations of submicrometer MOSFETs. It is shown that the energy balance model can be effectively used to reproduce experimental results, in contrast to the drift-diffusion model that substantially underestimates the drain current and transconductance of submicrometer FETs. It is known that velocity overshoot can be successfully predicted also by Monte-Carlo simulations. However, the energy balance model is much less time-consuming.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
