Pregled bibliografske jedinice broj: 154338
Influence of the Charge Sharing Effect on BVCE0 vs fT Trade-off Solution
Influence of the Charge Sharing Effect on BVCE0 vs fT Trade-off Solution // Proceedings of the MIDEM Conference 2004 / Trontelj, Janez ; Cvikl, Bruno ; Šorli, Iztok (ur.).
Ljubljana: Multikop, 2004. str. 145-150 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
Influence of the Charge Sharing Effect on BVCE0 vs fT Trade-off Solution
Autori
Koričić, Marko ; Biljanović, Petar ; Suligoj, Tomislav
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the MIDEM Conference 2004
/ Trontelj, Janez ; Cvikl, Bruno ; Šorli, Iztok - Ljubljana : Multikop, 2004, 145-150
Skup
40th International Conference on Microelectronics, Devices and Materials MIDEM 2004
Mjesto i datum
Maribor, Slovenija, 29.09.2004. - 01.10.2004
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
bipolar transistor; collector doping; horizontal current; BVCE0; charge sharing
Sažetak
In order to improve a high-frequency performance and to increase the driving current of bipolar transistors, the collector doping concentration has to be increased, which degrades the breakdown voltages. The observed improvement of BVCEO and fT BVCEO product of Horizontal Current Bipolar Transistor (HCBT) is explained by the collector charge sharing between the extrinsic and intrinsic base acceptors. Electrical characteristics of the HCBT structure are simulated. It is shown that BVCEO is increased by 23.6 % while fT is reduced only by 5.7 % resulting in higher fT BVCEO product. A simple model is developed to physically explain charge sharing effect and improvement of the breakdown voltage.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
