Pregled bibliografske jedinice broj: 154001
A Low-cost Horizontal Current Bipolar Transistor (HCBT) Technology for the BiCMOS Integration with FinFETs
A Low-cost Horizontal Current Bipolar Transistor (HCBT) Technology for the BiCMOS Integration with FinFETs // Solid-state electronics, 48 (2004), 10-11; 2047-2050 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 154001 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
A Low-cost Horizontal Current Bipolar Transistor (HCBT) Technology for the BiCMOS Integration with FinFETs
Autori
Suligoj, Tomislav ; Liu, H. ; Sin, J.K.O. ; Tsui, K. ; Chu, R. ; Chen, K.J. ; Biljanovic, Petar ; Wang, Kang L.
Izvornik
Solid-state electronics (0038-1101) 48
(2004), 10-11;
2047-2050
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
Horizontal Current Bipolar Transistor; lateral bipolar transistor; parasitics reduction
Sažetak
A novel Horizontal Current Bipolar Transistor (HCBT) is processed with the scaled down dimensions and the improved technology. The active transistor region is built in the defect-free sidewall of the 580 nm wide n-hills in the (110) wafer, implying the reduction of the parasitic region's volume, i.e. the extrinsic base and the collector. The fabricated HCBT exhibits the cutoff frequency (fT) of 21.4 GHz, the maximum frequency of oscillations (fmax) of 32.6 GHz and the collector-emitter breakdown voltage (BVCEO) of 5.6 V, which are the highest fT and the highest fTBVCEO product among the Lateral Bipolar Transistors (LBTs).
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
