Pregled bibliografske jedinice broj: 149451
Lateral Bipolar Transistor's Extrinsic Base Design for Better fT vs BVCEO Solution
Lateral Bipolar Transistor's Extrinsic Base Design for Better fT vs BVCEO Solution // Proceedings / MELECON 2004 / Matijašević, Maja ; Pejčinović, Branimir ; Tomšić, Željko ; Butković, Željko (ur.).
Zagreb: Institute of Electrical and Electronics Engineers (IEEE), 2004. str. 39-42 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
Lateral Bipolar Transistor's Extrinsic Base Design for Better fT vs BVCEO Solution
Autori
Koričić, Marko ; Biljanović, Petar ; Suligoj, Tomislav
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings / MELECON 2004
/ Matijašević, Maja ; Pejčinović, Branimir ; Tomšić, Željko ; Butković, Željko - Zagreb : Institute of Electrical and Electronics Engineers (IEEE), 2004, 39-42
Skup
The 12th IEEE Mediterranean Electrotechnical Conference
Mjesto i datum
Dubrovnik, Hrvatska, 12.05.2004. - 15.05.2004
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
bipolar transistor; charge sharing; high frequency performance
Sažetak
In modern fast bipolar transistor design, high frequency performance and current operating level are traded off with breakdown voltages. Charge sharing between extrinsic and intrinsic base acceptors reduces the maximum electric field in the intrinsic transistor and improves BVCEO. Extrinsic base can be optimized and higher breakdown voltage can be obtained without severely degrading high frequency performance. This was shown by the simulation of the Horizontal Current Bipolar Transistor electrical characteristics.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
