Pregled bibliografske jedinice broj: 1469
Ionized donor bound excitons in GaN
Ionized donor bound excitons in GaN // Applied physics letters, 71 (1997), 13; 1837-1839 doi:10.1063/1.119415 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 1469 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Ionized donor bound excitons in GaN
Autori
Šantić, Branko ; Mertz, C. ; Kaufmann, U. ; Niebhur, R. ; Obloh, H. ; Bachem, K.
Izvornik
Applied physics letters (0003-6951) 71
(1997), 13;
1837-1839
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
GaN ; excitons ; photoluminescece
Sažetak
The temperature and excitation power dependence of a bound exciton photoluminescence line S with a localization energy Q = 11.5 meV has been studied in undoped and moderately Mg-doped wurtzite GaN of high resistivity. The data provide strong evidence that line S is due to recombination of excitons bound to ionized shallow donors. The consistency of this assignment with theoretical predictions is demonstrated.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Citiraj ovu publikaciju:
Časopis indeksira:
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus