Pregled bibliografske jedinice broj: 145483
Recent Advances in the Measurement of Interstitial Oxygen in Silicon by Infra-Red Spectroscopy
Recent Advances in the Measurement of Interstitial Oxygen in Silicon by Infra-Red Spectroscopy // Diffusion and defect data, solid state data. Part A, Defect and diffusion forum, 221-223 (2003), -; 123-131 (međunarodna recenzija, pregledni rad, znanstveni)
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Naslov
Recent Advances in the Measurement of Interstitial Oxygen in Silicon by Infra-Red Spectroscopy
Autori
Pivac, Branko ; Sassella, A. ; Borghesi, A.
Izvornik
Diffusion and defect data, solid state data. Part A, Defect and diffusion forum (1012-0386) 221-223
(2003);
123-131
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, pregledni rad, znanstveni
Ključne riječi
infra-red spectroscopy; interstitial oxygen; silicon wafers; spurious data
Sažetak
The precise, rapid, and reliable quantitative evaluation of interstitial oxygen present in silicon wafers is technologically very important and has been extensively studied since the Seventies. Among several techniques commonly used for this purpose, infrared (IR) spectroscopy is widely accepted as the most sensitive and reliable, being contemporarily non destructive. Several problems, such as multiphonon silicon absorption and oxide precipitate contribution, however, often interfere with the interstitial oxygen IR signal making the analysis complex and dubious. This paper reviews recent advances in addressing this problem and illustrates a new method for quantifying and subtracting the spurious contributions.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Citiraj ovu publikaciju:
Časopis indeksira:
- Web of Science Core Collection (WoSCC)
- SCI-EXP, SSCI i/ili A&HCI
Uključenost u ostale bibliografske baze podataka::
- The INSPEC Science Abstracts series
