Naslov
Interstitial defects in ion-implanted Si

Autori
Kovačević, Ivana ; Borjanović, Vesna ; Pivac, Branko

Izvornik
Vacuum (0042-207X) 71 (2003); 129-133

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Silicon ; Ion implantation ; Defects ; DLTS ; Interstitial

Sažetak
We present a study of defect states occurring in boron-doped p-type CZ Si(100) after high dose C+ ion implantation and subsequent thermal annealing. Deep level transient spectroscopy (DLTS) was used to identify the electrical active defects. It is shown that the predominant defect created during the implantation is related to Si selfinterstitial clusters. Upon annealing DLTS spectra were dominated by the peaks associated with the interstitial-related defect state Ci-Oi, H(0.36). Above ~650 °C the concentration of defects is reduced and the broad shoulder in spectra is observed, a feature typical of an extended defect. It is associated with rod-like {; ; ; ; ; ; ; 311}; ; ; ; ; ; ; extended defects which are known to supply the interstitials responsible for TED of B in Si. DLTS measurements were used to monitor the transition from small interstitial clusters to extended defects that occur upon increasing the annealing temperature

Izvorni jezik
Engleski

Znanstvena područja
Fizika

Napomena
Proceedings of the 9th Joint Vacuum Conference (JVC-9), organised by the Austrian Vacuum Society, in cooperation with the Vacuum societies of Hungary, Croatia, Slovenia, Czech Republic, Slovakia and Italy, Schloss Seggau, Austria

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