Pregled bibliografske jedinice broj: 140437
Investigation of the Extrinsic Base Effect on High Frequency Performance of Lateral Bipolar Transistor (LBT) with Laterally Contacted Base
Investigation of the Extrinsic Base Effect on High Frequency Performance of Lateral Bipolar Transistor (LBT) with Laterally Contacted Base // The Proceedings of the MIDEM 2003 Conference / Pignatel, Giorgio ; Žemva, Andrej ; Šorli, Iztok (ur.).
Ljubljana: Society for Microelectronics, Electronic Components and Materials (MIDEM), 2003. str. 207-212 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
Investigation of the Extrinsic Base Effect on High Frequency Performance of Lateral Bipolar Transistor (LBT) with Laterally Contacted Base
Autori
Koričić, Marko ; Suligoj, Tomislav ; Biljanović, Petar
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
The Proceedings of the MIDEM 2003 Conference
/ Pignatel, Giorgio ; Žemva, Andrej ; Šorli, Iztok - Ljubljana : Society for Microelectronics, Electronic Components and Materials (MIDEM), 2003, 207-212
Skup
39th International Conference on Microelectronics, Devices and Materials MIDEM 2003
Mjesto i datum
Ptuj, Slovenija, 01.10.2003. - 03.10.2003
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
lateral bipolar transistor ; extrinsic base effect
Sažetak
The extrinsic base in LBTs influences high frequency performance by decreasing the effective collector cross-section, increasing collector current density and increasing the effective transit time through the base – collector depletion region. These effects are examined on structure with laterally contacted base. Influence of the technological parameters, such as extrinsic base width, emitter width and link-base length, on fT and fmax are examined and optimization and scaling scheme for this structure is proposed. This work shows that link-base region should not be scaled down as much as possible, since fT is sacrificed to obtain higher fmax.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika