Pretražite po imenu i prezimenu autora, mentora, urednika, prevoditelja

Napredna pretraga

Pregled bibliografske jedinice broj: 140437

Investigation of the Extrinsic Base Effect on High Frequency Performance of Lateral Bipolar Transistor (LBT) with Laterally Contacted Base


Koričić, Marko; Suligoj, Tomislav; Biljanović, Petar
Investigation of the Extrinsic Base Effect on High Frequency Performance of Lateral Bipolar Transistor (LBT) with Laterally Contacted Base // The Proceedings of the MIDEM 2003 Conference / Pignatel, Giorgio ; Žemva, Andrej ; Šorli, Iztok (ur.).
Ljubljana: Society for Microelectronics, Electronic Components and Materials (MIDEM), 2003. str. 207-212 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)


CROSBI ID: 140437 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Investigation of the Extrinsic Base Effect on High Frequency Performance of Lateral Bipolar Transistor (LBT) with Laterally Contacted Base

Autori
Koričić, Marko ; Suligoj, Tomislav ; Biljanović, Petar

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
The Proceedings of the MIDEM 2003 Conference / Pignatel, Giorgio ; Žemva, Andrej ; Šorli, Iztok - Ljubljana : Society for Microelectronics, Electronic Components and Materials (MIDEM), 2003, 207-212

Skup
39th International Conference on Microelectronics, Devices and Materials MIDEM 2003

Mjesto i datum
Ptuj, Slovenija, 01.10.2003. - 03.10.2003

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
lateral bipolar transistor ; extrinsic base effect

Sažetak
The extrinsic base in LBTs influences high frequency performance by decreasing the effective collector cross-section, increasing collector current density and increasing the effective transit time through the base – collector depletion region. These effects are examined on structure with laterally contacted base. Influence of the technological parameters, such as extrinsic base width, emitter width and link-base length, on fT and fmax are examined and optimization and scaling scheme for this structure is proposed. This work shows that link-base region should not be scaled down as much as possible, since fT is sacrificed to obtain higher fmax.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA


Projekti:
0036001

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Petar Biljanović (autor)

Avatar Url Marko Koričić (autor)

Avatar Url Tomislav Suligoj (autor)


Citiraj ovu publikaciju:

Koričić, Marko; Suligoj, Tomislav; Biljanović, Petar
Investigation of the Extrinsic Base Effect on High Frequency Performance of Lateral Bipolar Transistor (LBT) with Laterally Contacted Base // The Proceedings of the MIDEM 2003 Conference / Pignatel, Giorgio ; Žemva, Andrej ; Šorli, Iztok (ur.).
Ljubljana: Society for Microelectronics, Electronic Components and Materials (MIDEM), 2003. str. 207-212 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Koričić, M., Suligoj, T. & Biljanović, P. (2003) Investigation of the Extrinsic Base Effect on High Frequency Performance of Lateral Bipolar Transistor (LBT) with Laterally Contacted Base. U: Pignatel, G., Žemva, A. & Šorli, I. (ur.)The Proceedings of the MIDEM 2003 Conference.
@article{article, author = {Kori\v{c}i\'{c}, Marko and Suligoj, Tomislav and Biljanovi\'{c}, Petar}, year = {2003}, pages = {207-212}, keywords = {lateral bipolar transistor, extrinsic base effect}, title = {Investigation of the Extrinsic Base Effect on High Frequency Performance of Lateral Bipolar Transistor (LBT) with Laterally Contacted Base}, keyword = {lateral bipolar transistor, extrinsic base effect}, publisher = {Society for Microelectronics, Electronic Components and Materials (MIDEM)}, publisherplace = {Ptuj, Slovenija} }
@article{article, author = {Kori\v{c}i\'{c}, Marko and Suligoj, Tomislav and Biljanovi\'{c}, Petar}, year = {2003}, pages = {207-212}, keywords = {lateral bipolar transistor, extrinsic base effect}, title = {Investigation of the Extrinsic Base Effect on High Frequency Performance of Lateral Bipolar Transistor (LBT) with Laterally Contacted Base}, keyword = {lateral bipolar transistor, extrinsic base effect}, publisher = {Society for Microelectronics, Electronic Components and Materials (MIDEM)}, publisherplace = {Ptuj, Slovenija} }




Contrast
Increase Font
Decrease Font
Dyslexic Font