Pregled bibliografske jedinice broj: 1282875
Thermoelectric power and its correlation with conductivity in NbS3 whiskers
Thermoelectric power and its correlation with conductivity in NbS3 whiskers // Physical review. B, 99 (2019), 23; 235155, 17 doi:10.1103/PhysRevB.99.235155 (međunarodna recenzija, članak, znanstveni)
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Naslov
Thermoelectric power and its correlation with
conductivity in NbS3 whiskers
Autori
Zybtsev, S. G. ; Pokrovskii, V. Ya. ; Nasretdinova, V. F. ; Zaitsev-Zotov, S. V. ; Pryadun, V. V. ; Kozlyakova, E. S. ; Volkova, O. S. ; Vasiliev, A. N. ; Woei, Wu Pai ; Starešinić, D.
Izvornik
Physical review. B (2469-9950) 99
(2019), 23;
235155, 17
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
ONE-DIMENSIONAL CONDUCTOR ; TRANSPORT-PROPERTIES ; ELECTRONIC-STRUCTURE ; CRYSTAL-STRUCTURE ; DENSITY ; TRANSITION ; BAND ; TEMPERATURE ; THERMOPOWER ; ENERGY
Sažetak
We report studies of the Seebeck coefficient S of the quasi-one-dimensional compound NbS3, together with the temperature dependence of its specific conductivity ss and heat capacity c(p). The monoclinic phase (NbS3-II) is studied over the temperature range T = 80-400 K, which covers two charge density wave (CDW) transitions at T-P1 = 360 K (CDW-1) and T-P2 = 150 K (CDW-2). The S(T) curves show features in the vicinities of both CDW transitions and appear to be correlated with the value of sigma(s)(300 K): The increase of S below T-P1 in the high-Ohmic samples reveals a complete dielectrization of the electronic spectrum, while in the low-Ohmic samples S decreases below T-P1 and even becomes negative below T-P2. The magnitude of S in low-Ohmic samples at T < T-P2 is well below k(B)/e approximate to 86 mu V/K, k(B) being the Boltzmann constant and e the elementary charge, which is surprisingly low for a usual CDW semiconducting state. Our results suggest that at T-P1 the main electronic band with p-type carriers becomes gapped, while some n-type carriers can remain in a separate band with low density of states. These carriers, whose concentration is defined by the compositional doping, are gapped at T-P2. We also report S for the triclinic dielectric phase of NbS3 (NbS3-I). Its low absolute value, similar to k(B)/e, and the anomalous temperature dependence demonstrate that NbS3-I is neither a semiconductor nor a CDW conductor in the usual sense.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
- Nature Index