Pregled bibliografske jedinice broj: 1279953
Potential of High-Voltage Single-Emitter RESURF Horizontal Current Bipolar Transistor for RF Circuits
Potential of High-Voltage Single-Emitter RESURF Horizontal Current Bipolar Transistor for RF Circuits // 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
online ; Monterey (CA), Sjedinjene Američke Države: Institute of Electrical and Electronics Engineers (IEEE), 2021. str. 1-4 doi:10.1109/bcicts50416.2021.9682490 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
Potential of High-Voltage Single-Emitter RESURF
Horizontal Current Bipolar Transistor for RF
Circuits
Autori
Žilak, Josip ; Osrečki, Željko ; Koričić, Marko ; Bogdanović, Filip ; Suligoj, Tomislav
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
/ - : Institute of Electrical and Electronics Engineers (IEEE), 2021, 1-4
ISBN
978-1-6654-3991-6
Skup
IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Mjesto i datum
Online ; Monterey (CA), Sjedinjene Američke Države, 05.12.2021. - 08.12.2021
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
horizontal current bipolar transistor (HCBT) , fully depleted collector , RESURF , minimum noise figure , large-signal , linear operating area , RF circuits , RF power amplifier
Sažetak
High-voltage single-emitter (HV SE) Horizontal Current Bipolar Transistor (HCBT) with CMOS p - well RESURF region is analyzed with respect to its utilization in RF circuits. If compared to the high-speed (HS) HCBT, it retains the high- frequency characteristics to a certain extent due to the reduced base-collector capacitance by the full depletion of n -collector region, which is also accompanied by the breakdown voltage increase (e.g., BV CEO from 3.4 V to 10.5 V). The minimum noise figure NFmin of 1.2 dB at 0.9 GHz and 1.54 dB at 2.4 GHz is reported, which is by about 0.2 dB higher than in HS HCBT. Basically, the same linear operating area at low-voltage and high- current regions as in HS HCBT is achieved by transistor area increase, which is relevant for the Class-A power amplifiers. The examined device exhibits maximum output power of 19.3 dBm and gain of 17.3 dB in PldB at 0.9 GHz, IC=44.4 mA and VCE as high as 8 V. Therefore, the HV SE HCBT is shown to be suitable for the sub-5 GHz RF circuits, offering operation at higher VCE attractive for high-voltage applications such as access points.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
HRZZ-IP-2018-01-5296 - Nova generacija poluvodičkih elemenata i integriranih sklopova za eru Interneta stvari (NexGenSemi) (Suligoj, Tomislav, HRZZ ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
Profili:
Tomislav Suligoj
(autor)
Filip Bogdanović
(autor)
Josip Žilak
(autor)
Željko Osrečki
(autor)
Marko Koričić
(autor)