Pregled bibliografske jedinice broj: 1274729
Determining Graphene and Substrate Quality from the Coupled Hall Mobility Measurements and Theoretical Modeling
Determining Graphene and Substrate Quality from the Coupled Hall Mobility Measurements and Theoretical Modeling // Proceedings of the 46th Intl. Convention MIPRO 2023 - MEET (Microelectronics, Electronics and Electronic Technology) / Skala, Karolj (ur.).
Rijeka: Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2023. str. 195-199 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 1274729 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Determining Graphene and Substrate Quality from the Coupled Hall Mobility Measurements and Theoretical Modeling
Autori
Japec, Karolina ; Matić, Mislav ; Lukose, Rasuole ; Lisker, Marco ; Lukošius, Mindaugas ; Poljak, Mirko
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the 46th Intl. Convention MIPRO 2023 - MEET (Microelectronics, Electronics and Electronic Technology)
/ Skala, Karolj - Rijeka : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2023, 195-199
Skup
46th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO 2023) ; Microelectronics, Electronics and Electronic Technology (MEET 2023)
Mjesto i datum
Opatija, Hrvatska, 22.05.2023. - 26.05.2023
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
graphene, mobility, scattering rate, Coulomb impurity, corrugations, defects, surface roughness, momentum relaxation time (MRT) approximation
Sažetak
An increase of mobility up to ~2600 cm2/Vs is observed in graphene by Hall bar characterization within the temperature range from 40 K to 300 K. The increasing trend is attributed to Coulomb scattering by employing theoretical modeling based on the momentum relaxation time approximation of the Boltzmann transport equation. We also find that at room temperature and for higher charge densities additional mechanisms such as lattice defect and/or substrate corrugation scattering become important and restrict the mobility down to only ~200 cm2/Vs and carrier mean free paths well under ~35 nm.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
HRZZ-UIP-2019-04-3493 - Računalno projektiranje nanotranzistora temeljenih na novim 2D materijalima (CONAN2D) (Poljak, Mirko, HRZZ ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb