Naslov
Transport Properties and Device Performance of Quasi-One-Dimensional MoS2 FETs

Autori
Matić, Mislav ; Poljak, Mirko

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the 46th Intl. Convention MIPRO 2023 - MEET (Microelectronics, Electronics and Electronic Technology) / Skala, Karolj - Rijeka : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2023, 184-188

Skup
46th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO 2023) ; Microelectronics, Electronics and Electronic Technology (MEET 2023)

Mjesto i datum
Opatija, Hrvatska, 22.05.2023. - 26.05.2023

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
MoS2, molybdenum disulfide, quasi-onedimensional, nanoribbon, quantum transport, Green’s function, NEGF, ab initio, DFT, MLWF

Sažetak
We investigated the bandstructure, transport and device properties of semiconducting MoS2 nanoribbons (MoS2NR) with hybrid OH-passivated armchair edges using orbitally-resolved ab initio Hamiltonians and quantum transport simulations based on Green’s functions. The impact of MoS2NR width scaling on the bandstructure, transmission, bandgap, injection velocity, charge density and ON-state current are analyzed in detail using the ballistic FET model. We find that sub-3 nm-wide and ~15 nm-long MoS2NR FETs offer low driving currents under 0.43 mA/μm for nFETs and under 0.6 mA/μm for pFETs. Moreover, the current is only weakly modulated by nanoribbon width downscaling due to immunity of the MoS2NR bandstructure to quantum confinement effects.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

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