Naslov
Tunneling Attenuation and Leakage Current in MoS2 Nanoribbon MOSFETs

Autori
Prevarić, Ivan ; Matić, Mislav ; Poljak, Mirko

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the 46th Intl. Convention MIPRO 2023 - MEET (Microelectronics, Electronics and Electronic Technology) / Skala, Karolj - Rijeka : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2023, 179-183

Skup
46th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO 2023) ; Microelectronics, Electronics and Electronic Technology (MEET 2023)

Mjesto i datum
Opatija, Hrvatska, 22.05.2023. - 26.05.2023

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
MoS2, molybdenum disulfide, leakage current, complex bandstructure, tunneling, quasi-one-dimensional, nanoribbon, quantum transport, NEGF, ab initio, DFT

Sažetak
We study the OFF-state leakage current in quasi-one-dimensional MoS2 nanoribbon (MoS2NR) FETs using ab initio Hamiltonians and quantum transport simulations based on Green’s functions. Complex band structure is computed for these devices and the energy dependent tunneling attenuation inside the bandgap is obtained. We investigate the tunneling component of the OFF state leakage for sub-20 nm long and sub-3 nm wide MoS2NR FETs, using the under-the-barrier (UTB) and top-of-the barrier (ToB) ballistic models. We report that using the parabolically-approximated attenuation overestimates the OFF-state leakage significantly. Furthermore, we demonstrate that all MoS2NR FETs show good tunneling suppression due to high attenuation even for the shortest devices where the OFF-state leakage is under 16.5 nA/μm for nFETs and lower than 22 nA/μm for pFETs.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

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