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Pregled bibliografske jedinice broj: 1272201

A 1-<i>μ</i>W Radiation-Hard Front-End in a 0.18-<i>μ</i>m CMOS Process for the MALTA2


Piro, F.; Allport, P.; Asensi, I.; Berdalovic, I.; Bortoletto, D.; Buttar, C.; Cardella, R.; Charbon, E.; Dachs, F.; Dao, V. et al.
A 1-μW Radiation-Hard Front-End in a 0.18-μm CMOS Process for the MALTA2 // IEEE Transactions on Nuclear Science, 69 (2022), 6; 1299-1309 doi:10.1109/tns.2022.3170729 (međunarodna recenzija, članak, znanstveni)


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Naslov
A 1-<i>μ</i>W Radiation-Hard Front-End in a 0.18-<i>μ</i>m CMOS Process for the MALTA2
(A 1-<i>μ</i>W Radiation-Hard Front-End in a 0.18-<i>μ</i>m CMOS Process for the MALTA2 Monolithic Sensor)

Autori
Piro, F. ; Allport, P. ; Asensi, I. ; Berdalovic, I. ; Bortoletto, D. ; Buttar, C. ; Cardella, R. ; Charbon, E. ; Dachs, F. ; Dao, V. ; Dobrijevic, D. ; Dyndal, M. ; Flores, L. ; Freeman, P. ; Gabrielli, A. ; Gonella, L. ; Kugathasan, T. ; LeBlanc, M. ; Oyulmaz, K. ; Pernegger, H. ; Riedler, P. ; van Rijnbach, M. ; Sandaker, H. ; Sharma, A. ; Solans, C. ; Snoeys, W. ; Suligoj, T. ; Torres, J. ; Worm, S.

Izvornik
IEEE Transactions on Nuclear Science (0018-9499) 69 (2022), 6; 1299-1309

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Front-end circuits , monolithic active pixel sensors (MAPSs) , pixel detectors , radiation hardness

Sažetak
In this article, a low-power, radiation-hard front-end circuit for monolithic pixel sensors, designed to meet the requirements of low noise and low pixel-to-pixel variability, the key features to achieve high detection efficiencies, is presented. The sensor features a small collection electrode to achieve a small capacitance (<5 fF) and allows full CMOS in-pixel circuitry. The circuit is implemented in the 180-nm CMOS imaging technology from the TowerJazz foundry and integrated into the MALTA2 chip, which is part of a development that targets the specifications of the outer pixel layer of the ATLAS Inner Tracker upgrade at the LHC. One of the main challenges for monolithic sensors is a radiation hardness up to 10 15 1-MeV neq/cm2 non-ionizing energy loss (NIEL) and 80 Mrad total ionizing dose (TID) required for this application. Tests up to 3⋅1015 1-MeV neq/cm2 and 100 Mrad were performed on the MALTA2 sensor and front-end circuit, which still show good performance even after these levels of irradiation, promising for even more demanding applications such as the future experiments at the high-luminosity large hadron collider (HL-LHC).

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Elektrotehnika



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Citiraj ovu publikaciju:

Piro, F.; Allport, P.; Asensi, I.; Berdalovic, I.; Bortoletto, D.; Buttar, C.; Cardella, R.; Charbon, E.; Dachs, F.; Dao, V. et al.
A 1-μW Radiation-Hard Front-End in a 0.18-μm CMOS Process for the MALTA2 // IEEE Transactions on Nuclear Science, 69 (2022), 6; 1299-1309 doi:10.1109/tns.2022.3170729 (međunarodna recenzija, članak, znanstveni)
Piro, F., Allport, P., Asensi, I., Berdalovic, I., Bortoletto, D., Buttar, C., Cardella, R., Charbon, E., Dachs, F. & Dao, V. (2022) A 1-μW Radiation-Hard Front-End in a 0.18-μm CMOS Process for the MALTA2. IEEE Transactions on Nuclear Science, 69 (6), 1299-1309 doi:10.1109/tns.2022.3170729.
@article{article, author = {Piro, F. and Allport, P. and Asensi, I. and Berdalovic, I. and Bortoletto, D. and Buttar, C. and Cardella, R. and Charbon, E. and Dachs, F. and Dao, V. and Dobrijevic, D. and Dyndal, M. and Flores, L. and Freeman, P. and Gabrielli, A. and Gonella, L. and Kugathasan, T. and LeBlanc, M. and Oyulmaz, K. and Pernegger, H. and Riedler, P. and van Rijnbach, M. and Sandaker, H. and Sharma, A. and Solans, C. and Snoeys, W. and Suligoj, T. and Torres, J. and Worm, S.}, year = {2022}, pages = {1299-1309}, DOI = {10.1109/tns.2022.3170729}, keywords = {Front-end circuits , monolithic active pixel sensors (MAPSs) , pixel detectors , radiation hardness}, journal = {IEEE Transactions on Nuclear Science}, doi = {10.1109/tns.2022.3170729}, volume = {69}, number = {6}, issn = {0018-9499}, title = {A 1-μW Radiation-Hard Front-End in a 0.18-μm CMOS Process for the MALTA2}, keyword = {Front-end circuits , monolithic active pixel sensors (MAPSs) , pixel detectors , radiation hardness} }
@article{article, author = {Piro, F. and Allport, P. and Asensi, I. and Berdalovic, I. and Bortoletto, D. and Buttar, C. and Cardella, R. and Charbon, E. and Dachs, F. and Dao, V. and Dobrijevic, D. and Dyndal, M. and Flores, L. and Freeman, P. and Gabrielli, A. and Gonella, L. and Kugathasan, T. and LeBlanc, M. and Oyulmaz, K. and Pernegger, H. and Riedler, P. and van Rijnbach, M. and Sandaker, H. and Sharma, A. and Solans, C. and Snoeys, W. and Suligoj, T. and Torres, J. and Worm, S.}, year = {2022}, pages = {1299-1309}, DOI = {10.1109/tns.2022.3170729}, keywords = {Front-end circuits , monolithic active pixel sensors (MAPSs) , pixel detectors , radiation hardness}, journal = {IEEE Transactions on Nuclear Science}, doi = {10.1109/tns.2022.3170729}, volume = {69}, number = {6}, issn = {0018-9499}, title = {A 1-μW Radiation-Hard Front-End in a 0.18-μm CMOS Process for the MALTA2 Monolithic Sensor}, keyword = {Front-end circuits , monolithic active pixel sensors (MAPSs) , pixel detectors , radiation hardness} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


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