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Pregled bibliografske jedinice broj: 1256501

Full-Chip ESD Simulations in Bipolar Technology

Galic, Vlatko; Wieers, Aarnout; Gillon, Renaud; Baric, Adrijan
Full-Chip ESD Simulations in Bipolar Technology // International Symposium on Electromagnetic Compatibility (EMC EUROPE 2018)
Amsterdam, Nizozemska: Institute of Electrical and Electronics Engineers (IEEE), 2018. str. 451-456 doi:10.1109/emceurope.2018.8485077 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)

CROSBI ID: 1256501 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Full-Chip ESD Simulations in Bipolar Technology

Autori
Galic, Vlatko ; Wieers, Aarnout ; Gillon, Renaud ; Baric, Adrijan

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

ISBN
978-1-4673-9699-8

Skup
International Symposium on Electromagnetic Compatibility (EMC EUROPE 2018)

Mjesto i datum
Amsterdam, Nizozemska, 27.08.2018. - 30.08.2018

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
bipolar transistors ; electrostatic discharge ; integrated circuits ; resistors

Sažetak
This paper presents the electrostatic discharge (ESD) modeling and simulation flow for integrated circuits (IC) developed for a pure bipolar technology. Modeling is based on SPICE and all the needed model parameters can be extracted from Transmission Line Pulsing (TLP) measurements. The described method uses compact, empirical models that are scalable with all physical parameters defined in the technology. The approach used for the model fitting is a Levenberg-Marquardt algorithm. The complete modeling process for polysilicon resistors and vertical NPN transistors has been shown. This approach has been validated by comparing full-chip simulations with the results of the real ESD tests on an IC and very good agreement is obtained. The described method provides a way to run ESD verification of ICs which use self-protection principle, thus it enables the ESD protection network optimization.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Vlatko Galić (autor)

Avatar Url Adrijan Barić (autor)

Poveznice na cjeloviti tekst rada:

doi

Citiraj ovu publikaciju:

Galic, Vlatko; Wieers, Aarnout; Gillon, Renaud; Baric, Adrijan
Full-Chip ESD Simulations in Bipolar Technology // International Symposium on Electromagnetic Compatibility (EMC EUROPE 2018)
Amsterdam, Nizozemska: Institute of Electrical and Electronics Engineers (IEEE), 2018. str. 451-456 doi:10.1109/emceurope.2018.8485077 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Galic, V., Wieers, A., Gillon, R. & Baric, A. (2018) Full-Chip ESD Simulations in Bipolar Technology. U: International Symposium on Electromagnetic Compatibility (EMC EUROPE 2018) doi:10.1109/emceurope.2018.8485077.
@article{article, author = {Galic, Vlatko and Wieers, Aarnout and Gillon, Renaud and Baric, Adrijan}, year = {2018}, pages = {451-456}, DOI = {10.1109/emceurope.2018.8485077}, keywords = {bipolar transistors, electrostatic discharge, integrated circuits, resistors}, doi = {10.1109/emceurope.2018.8485077}, isbn = {978-1-4673-9699-8}, title = {Full-Chip ESD Simulations in Bipolar Technology}, keyword = {bipolar transistors, electrostatic discharge, integrated circuits, resistors}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, publisherplace = {Amsterdam, Nizozemska} }
@article{article, author = {Galic, Vlatko and Wieers, Aarnout and Gillon, Renaud and Baric, Adrijan}, year = {2018}, pages = {451-456}, DOI = {10.1109/emceurope.2018.8485077}, keywords = {bipolar transistors, electrostatic discharge, integrated circuits, resistors}, doi = {10.1109/emceurope.2018.8485077}, isbn = {978-1-4673-9699-8}, title = {Full-Chip ESD Simulations in Bipolar Technology}, keyword = {bipolar transistors, electrostatic discharge, integrated circuits, resistors}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, publisherplace = {Amsterdam, Nizozemska} }

Časopis indeksira:


  • Web of Science Core Collection (WoSCC)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus

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