Naslov
Small angle X-ray scattering study of oxygen precipitation in silicon

Autori
Pivac, Branko ; Dubček, Pavo ; Bernstorff, Sigrid ; Borghesi, Alessandro ; Sassella, Adele ; Porrini, Maria

Izvornik
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (0168-583X) 200 (2003); 105-109

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
silicon; defects; oxygen; SAXS

Sažetak
Czochralski-grown dislocation-free silicon is used in the semiconductor industry almost exclusively for manufacturing VLSI devices. Such material contains small quantities (~ 20 ppm) of dissolved oxygen, which can have a crucial effect on the properties of produced devices. Therefore it is of great importance to study its precipitation in a silicon matrix after given thermal treatment. The small angle X-ray scattering (SAXS) technique was used to study oxygen precipitation in monocrystalline silicon samples. We used 8 and 16 keV radiation to overcome the high absorption at low energies. A series of samples has been prepared with controlled sequence of oxygen nucleation and precipitation phase and measured with SAXS. It is shown that this low contrast changes in standard wafers can be investigated using synchrotron radiation.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

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