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Pregled bibliografske jedinice broj: 1207695

M-center in low-energy electron irradiated 4H-SiC

Knežević, Tihomir; HadžipaÅ”ić, Amira; Ohshima, Takeshi; Makino, Takahiro; Capan, Ivana
M-center in low-energy electron irradiated 4H-SiC // Applied Physics Letters, 120 (2022), 25; 252101, 4 doi:10.1063/5.0095827 (međunarodna recenzija, članak, znanstveni)

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Naslov
M-center in low-energy electron irradiated 4H-SiC

Autori
Knežević, Tihomir ; HadžipaÅ”ić, Amira ; Ohshima, Takeshi ; Makino, Takahiro ; Capan, Ivana

Izvornik
Applied Physics Letters (0003-6951) 120 (2022), 25; 252101, 4

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
defects ; silicon carbide ; irradiation ; DLTS ;

Sažetak
We report on the low-energy electron irradiated 4H-SiC material studied by means of deep-level transient spectroscopy (DLTS) and Laplace-DLTS. Electron irradiation has introduced the following deep level defects: EH1 and EH3 previously assigned to carbon interstitial-related defects. We propose that EH1 and EH3 are identical to M1 and M3, also recently assigned to carbon interstitial defects, and assign them to š¶=š‘–(ā„Ž) and š¶0 š‘–(ā„Ž), respectively.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA

Ustanove:
Institut "Ruđer BoÅ”ković", Zagreb

Profili:

Avatar Url Ivana Capan (autor)

Avatar Url Tihomir Knežević (autor)

Poveznice na cjeloviti tekst rada:

Pristup cjelovitom tekstu rada doi aip.scitation.org doi.org fulir.irb.hr

Citiraj ovu publikaciju:

Knežević, Tihomir; HadžipaÅ”ić, Amira; Ohshima, Takeshi; Makino, Takahiro; Capan, Ivana
M-center in low-energy electron irradiated 4H-SiC // Applied Physics Letters, 120 (2022), 25; 252101, 4 doi:10.1063/5.0095827 (međunarodna recenzija, članak, znanstveni)
Knežević, T., HadžipaÅ”ić, A., Ohshima, T., Makino, T. & Capan, I. (2022) M-center in low-energy electron irradiated 4H-SiC. Applied Physics Letters, 120 (25), 252101, 4 doi:10.1063/5.0095827.
@article{article, author = {Kne\v{z}evi\'{c}, Tihomir and Had\v{z}ipa\v{s}i\'{c}, Amira and Ohshima, Takeshi and Makino, Takahiro and Capan, Ivana}, year = {2022}, pages = {4}, DOI = {10.1063/5.0095827}, chapter = {252101}, keywords = {defects, silicon carbide, irradiation, DLTS, }, journal = {Applied Physics Letters}, doi = {10.1063/5.0095827}, volume = {120}, number = {25}, issn = {0003-6951}, title = {M-center in low-energy electron irradiated 4H-SiC}, keyword = {defects, silicon carbide, irradiation, DLTS, }, chapternumber = {252101} }
@article{article, author = {Kne\v{z}evi\'{c}, Tihomir and Had\v{z}ipa\v{s}i\'{c}, Amira and Ohshima, Takeshi and Makino, Takahiro and Capan, Ivana}, year = {2022}, pages = {4}, DOI = {10.1063/5.0095827}, chapter = {252101}, keywords = {defects, silicon carbide, irradiation, DLTS, }, journal = {Applied Physics Letters}, doi = {10.1063/5.0095827}, volume = {120}, number = {25}, issn = {0003-6951}, title = {M-center in low-energy electron irradiated 4H-SiC}, keyword = {defects, silicon carbide, irradiation, DLTS, }, chapternumber = {252101} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus
  • Nature Index

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