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Pregled bibliografske jedinice broj: 120403

Time-resolved ion beam-induced charge collection measurement of minority carrier lifetime in semiconductor power devices by using Gunn's theorem


Manfredotti, C.; Fizzotti, C.; Lo Giudice, A.; Jakšić, Milko; Pastuović, Željko; Paolini, C.; Olivero, P.; Vittone, E.
Time-resolved ion beam-induced charge collection measurement of minority carrier lifetime in semiconductor power devices by using Gunn's theorem // Materials science & engineering. B, Solid-state materials for advanced technology, 102 (2003), 193-197 (međunarodna recenzija, članak, znanstveni)


CROSBI ID: 120403 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Time-resolved ion beam-induced charge collection measurement of minority carrier lifetime in semiconductor power devices by using Gunn's theorem

Autori
Manfredotti, C. ; Fizzotti, C. ; Lo Giudice, A. ; Jakšić, Milko ; Pastuović, Željko ; Paolini, C. ; Olivero, P. ; Vittone, E.

Izvornik
Materials science & engineering. B, Solid-state materials for advanced technology (0921-5107) 102 (2003); 193-197

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
ion beam-induced charge collection; silicon device characterisation; carrier lifetime

Sažetak
Ion microbeam techniques like ion beam-induced charge collection (IBICC) are very powerful methods in order to investigate and to map the transport properties in different technologically important semiconductors and in particular in materials proposed for nuclear detection. Time-resolved ion beam-induced charge collection (TRIBICC) represents a further improvement with respect to more traditional IBICC, since it can supply not only the charge collection efficiency (and through it data on mobility and trapping time of carriers in drift regions) but also the time behaviours of the charge collection. For long collection times, this means to gather information, also about diffusion lengths and lifetimes of carriers in the diffusion regions, which are always present in undepleted electronic devices, in particular power devices, and which are of paramount importance as inputs for simulation codes. By TRIBICC, in fact, some difficulties could be avoided in analysis of data collected in cases when lifetimes and shaping times of electronic chain are similar, and the sensitivity of the method is worse. In order to suitably analyse TRIBICC data, a theoretical model should be available: in general, Ramo's theorem is used, but its validity in cases when space charge is present is questionable. A more general and powerful method is presented in this work by using Gunn's theorem and a particular formulation of the generation function in order to solve the adjoint of the continuity equation in the time-dependent case. An application of this method to a commercial power device is presented and discussed.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekti:
0098013

Ustanove:
Institut "Ruđer Bošković", Zagreb

Profili:

Avatar Url Milko Jakšić (autor)

Avatar Url Željko Pastuović (autor)


Citiraj ovu publikaciju:

Manfredotti, C.; Fizzotti, C.; Lo Giudice, A.; Jakšić, Milko; Pastuović, Željko; Paolini, C.; Olivero, P.; Vittone, E.
Time-resolved ion beam-induced charge collection measurement of minority carrier lifetime in semiconductor power devices by using Gunn's theorem // Materials science & engineering. B, Solid-state materials for advanced technology, 102 (2003), 193-197 (međunarodna recenzija, članak, znanstveni)
Manfredotti, C., Fizzotti, C., Lo Giudice, A., Jakšić, M., Pastuović, Ž., Paolini, C., Olivero, P. & Vittone, E. (2003) Time-resolved ion beam-induced charge collection measurement of minority carrier lifetime in semiconductor power devices by using Gunn's theorem. Materials science & engineering. B, Solid-state materials for advanced technology, 102, 193-197.
@article{article, author = {Manfredotti, C. and Fizzotti, C. and Lo Giudice, A. and Jak\v{s}i\'{c}, Milko and Pastuovi\'{c}, \v{Z}eljko and Paolini, C. and Olivero, P. and Vittone, E.}, year = {2003}, pages = {193-197}, keywords = {ion beam-induced charge collection, silicon device characterisation, carrier lifetime}, journal = {Materials science and engineering. B, Solid-state materials for advanced technology}, volume = {102}, issn = {0921-5107}, title = {Time-resolved ion beam-induced charge collection measurement of minority carrier lifetime in semiconductor power devices by using Gunn's theorem}, keyword = {ion beam-induced charge collection, silicon device characterisation, carrier lifetime} }
@article{article, author = {Manfredotti, C. and Fizzotti, C. and Lo Giudice, A. and Jak\v{s}i\'{c}, Milko and Pastuovi\'{c}, \v{Z}eljko and Paolini, C. and Olivero, P. and Vittone, E.}, year = {2003}, pages = {193-197}, keywords = {ion beam-induced charge collection, silicon device characterisation, carrier lifetime}, journal = {Materials science and engineering. B, Solid-state materials for advanced technology}, volume = {102}, issn = {0921-5107}, title = {Time-resolved ion beam-induced charge collection measurement of minority carrier lifetime in semiconductor power devices by using Gunn's theorem}, keyword = {ion beam-induced charge collection, silicon device characterisation, carrier lifetime} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus





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