Naslov
Layout-Dependent Noise Performance of Single- Photon Avalanche Diodes in 180 nm High-Voltage CMOS Technology

Autori
Požar, Borna ; Berdalović, Ivan ; Bogdanović, Filip ; Marković, Lovro ; Suligoj, Tomislav

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of Intl. Conv. MIPRO-MEET (Microelectronics, Electronics and Electronic Technology) / Skala, Karolj - Rijeka, 2022, 158-163

Skup
45th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO 2022) ; Microelectronics, Electronics and Electronic Technology (MEET 2022)

Mjesto i datum
Opatija, Hrvatska, 23.05.2022. - 27.05.2022

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
single photon avalanche diodes (SPADs), dark count rate (DCR), afterpusling, photodetectors, CMOS image sensors, photon counting, TCAD simulations, layout

Sažetak
The paper describes the implementation and characterization of single-photon avalanche diodes (SPADs) fabricated in a commercial 180 nm high voltage (HV) bipolar-CMOS-DMOS (BCD) technology. The SPAD structures utilize a deep, low-doped p-n junction as the avalanche multiplication layer, exploiting the high-voltage implant layers available in the technology. Technology computer aided design (TCAD) simulations are performed to ensure that breakdown occurs in the active region of the device and to estimate the breakdown voltage and dark count rate (DCR). The devices are fabricated with different sizes and a circular, octagonal or square layout. The SPADs are characterized in terms of current-voltage (I-V) curves and dark count rates, both on bare dies as well as on dies bonded to a printed circuit board (PCB), by connecting them to an offchip passive quenching circuit. Afterpulsing probability is analyzed by studying the distribution of interarrival times of dark pulses and comparing it to that of an ideal Poisson process. The circular and octagonal devices exhibit state-of-the-art noise performance with DCRs as low as 0.47 Hz/um2 at an excess voltage of 5 V, whereas the DCR of square structures increases by up to 2.7 times, partly due to afterpulsing effects at high excess voltages.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

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