Pregled bibliografske jedinice broj: 1196707
Bandstructure and Transport Properties of Semiconducting Gallenene Nanoribbons
Bandstructure and Transport Properties of Semiconducting Gallenene Nanoribbons // Proceedings of the 45th Intl. Convention MIPRO 2022 - MEET (Microelectronics, Electronics and Electronic Technology) / Skala, Karolj (ur.).
Rijeka: Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2022. str. 124-128 doi:10.23919/MIPRO55190.2022.9803442 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 1196707 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Bandstructure and Transport Properties of Semiconducting Gallenene Nanoribbons
Autori
Poljak, Mirko ; Matić, Mislav ; Prevarić, Ivan ; Japec, Karolina
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the 45th Intl. Convention MIPRO 2022 - MEET (Microelectronics, Electronics and Electronic Technology)
/ Skala, Karolj - Rijeka : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2022, 124-128
Skup
45th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO 2022) ; Microelectronics, Electronics and Electronic Technology (MEET 2022)
Mjesto i datum
Opatija, Hrvatska, 23.05.2022. - 27.05.2022
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
gallenene, gallenene nanoribbon, bandgap, conductance, atomistic simulation, quantum transport, NEGF
Sažetak
We investigated the bandstructure and transport properties of semiconducting zig-zag b-gallenene nanoribbons (GaNR) using orbitally-resolved Hamiltonians and quantum transport simulations. The impact of GaNR width scaling on the bandstructure, transmission, bandgap and conductance is analyzed in detail. We find that GaNRs exhibit a nontrivial width-dependence of the conductance that is also nonsymmetric for electrons and holes. Moreover, bandgaps of up to ~0.95 eV are achievable by nanoribbon width downscaling. These results are explained by studying the width-dependent evolution of GaNR bandstructure.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
HRZZ-UIP-2019-04-3493 - Računalno projektiranje nanotranzistora temeljenih na novim 2D materijalima (CONAN2D) (Poljak, Mirko, HRZZ ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
