Pregled bibliografske jedinice broj: 1186645
4H-SiC Schottky barrier diodes as radiation detectors: a review
4H-SiC Schottky barrier diodes as radiation detectors: a review // Electronics (Basel), 11 (2022), 4; 532, 12 doi:10.3390/electronics11040532 (međunarodna recenzija, pregledni rad, znanstveni)
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Naslov
4H-SiC Schottky barrier diodes as radiation detectors: a review
Autori
Capan, Ivana
Izvornik
Electronics (Basel) (2079-9292) 11
(2022), 4;
532, 12
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, pregledni rad, znanstveni
Ključne riječi
Schottky barrier diodes ; 4H-SiC ; radiation ; detection
Sažetak
In this review paper, an overview of the application of n-type 4H-SiC Schottky barrier diodes (SBDs) as radiation detectors is given. We have chosen 4H-SiC SBDs among other semiconductor devices such as PiN diodes or metal-oxide-semiconductor (MOS) structures, as significant progress has been achieved in radiation detection applications of SBDs in the last decade. Here, we present the recent advances at all key stages in the application of 4H-SiC SBDs as radiation detectors, namely: SBDs fabrication, electrical characterization of SBDs, and their radiation response. The main achievements are highlighted, and the main challenges are discussed.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- Social Science Citation Index (SSCI)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
