Pregled bibliografske jedinice broj: 1161759
Comparison of Discrete Bipolar Transistors and MOSFETs for High-Speed Switching Application
Comparison of Discrete Bipolar Transistors and MOSFETs for High-Speed Switching Application // 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO)
Opatija, Hrvatska: Institute of Electrical and Electronics Engineers (IEEE), 2021. str. 22-27 doi:10.23919/mipro52101.2021.9597068 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), ostalo)
CROSBI ID: 1161759 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Comparison of Discrete Bipolar Transistors and
MOSFETs for High-Speed Switching Application
Autori
Bogdanović, Filip ; Osrečki, Željko ; Žilak, Josip ; Koričić, Marko ; Suligoj, Tomislav
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), ostalo
Izvornik
2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO)
/ - : Institute of Electrical and Electronics Engineers (IEEE), 2021, 22-27
Skup
44th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO 2021)
Mjesto i datum
Opatija, Hrvatska, 27.09.2021. - 01.10.2021
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
Horizontal Current Bipolar Transistor (HCBT), Envelope Tracking (ET), wireless communication, power supply modulation, switching amplifier, switching efficency
Sažetak
Switching performance analysis in this paper presents how Horizontal Current Bipolar Transistor (HCBT) performs under switching mode of operation compared to other commercially available bipolar and MOS transistors, focusing mainly on power efficiency. Rudimentary measurement setup is devised, with target frequency spectrum for this analysis up to 100 MHz. Measurements were performed at frequencies of 1 MHz, 10 MHz and 100 MHz. Signal waveforms were measured at the input and output of analysed device. Dissipated power at each component of test circuit was calculated from the measurements to determine efficiency. The results show similar performance among RF bipolar junction transistors analysed in this paper. All bipolar transistors exhibit efficiency around 80% at 100 MHz, whereas the best performing MOSFET has η = 54.31%. The analysed MOSFETs show somewhat better performance comparing to bipolar transistors at lower frequencies, but with larger performance degradation with the frequency increase. This analysis shows potential of HCBT to be used in switching part of Envelope Tracking (ET), hybrid power supply modulation, pulse width modulation (PWM) or multilevel power supply switching to obtain higher efficiencies. Most of the efficiency reduction is caused by nonideal input signal.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
HRZZ-IP-2018-01-5296 - Nova generacija poluvodičkih elemenata i integriranih sklopova za eru Interneta stvari (NexGenSemi) (Suligoj, Tomislav, HRZZ ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
Profili:
Tomislav Suligoj
(autor)
Josip Žilak
(autor)
Filip Bogdanović
(autor)
Željko Osrečki
(autor)
Marko Koričić
(autor)