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Pregled bibliografske jedinice broj: 1161759

Comparison of Discrete Bipolar Transistors and MOSFETs for High-Speed Switching Application


Bogdanović, Filip; Osrečki, Željko; Žilak, Josip; Koričić, Marko; Suligoj, Tomislav
Comparison of Discrete Bipolar Transistors and MOSFETs for High-Speed Switching Application // 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO)
Opatija, Hrvatska: Institute of Electrical and Electronics Engineers (IEEE), 2021. str. 22-27 doi:10.23919/mipro52101.2021.9597068 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), ostalo)


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Naslov
Comparison of Discrete Bipolar Transistors and MOSFETs for High-Speed Switching Application

Autori
Bogdanović, Filip ; Osrečki, Željko ; Žilak, Josip ; Koričić, Marko ; Suligoj, Tomislav

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), ostalo

Izvornik
2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO) / - : Institute of Electrical and Electronics Engineers (IEEE), 2021, 22-27

Skup
44th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO 2021)

Mjesto i datum
Opatija, Hrvatska, 27.09.2021. - 01.10.2021

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Horizontal Current Bipolar Transistor (HCBT), Envelope Tracking (ET), wireless communication, power supply modulation, switching amplifier, switching efficency

Sažetak
Switching performance analysis in this paper presents how Horizontal Current Bipolar Transistor (HCBT) performs under switching mode of operation compared to other commercially available bipolar and MOS transistors, focusing mainly on power efficiency. Rudimentary measurement setup is devised, with target frequency spectrum for this analysis up to 100 MHz. Measurements were performed at frequencies of 1 MHz, 10 MHz and 100 MHz. Signal waveforms were measured at the input and output of analysed device. Dissipated power at each component of test circuit was calculated from the measurements to determine efficiency. The results show similar performance among RF bipolar junction transistors analysed in this paper. All bipolar transistors exhibit efficiency around 80% at 100 MHz, whereas the best performing MOSFET has η = 54.31%. The analysed MOSFETs show somewhat better performance comparing to bipolar transistors at lower frequencies, but with larger performance degradation with the frequency increase. This analysis shows potential of HCBT to be used in switching part of Envelope Tracking (ET), hybrid power supply modulation, pulse width modulation (PWM) or multilevel power supply switching to obtain higher efficiencies. Most of the efficiency reduction is caused by nonideal input signal.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA


Projekti:
HRZZ-IP-2018-01-5296 - Nova generacija poluvodičkih elemenata i integriranih sklopova za eru Interneta stvari (NexGenSemi) (Suligoj, Tomislav, HRZZ ) ( CroRIS)

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Poveznice na cjeloviti tekst rada:

doi ieeexplore.ieee.org

Citiraj ovu publikaciju:

Bogdanović, Filip; Osrečki, Željko; Žilak, Josip; Koričić, Marko; Suligoj, Tomislav
Comparison of Discrete Bipolar Transistors and MOSFETs for High-Speed Switching Application // 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO)
Opatija, Hrvatska: Institute of Electrical and Electronics Engineers (IEEE), 2021. str. 22-27 doi:10.23919/mipro52101.2021.9597068 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), ostalo)
Bogdanović, F., Osrečki, Ž., Žilak, J., Koričić, M. & Suligoj, T. (2021) Comparison of Discrete Bipolar Transistors and MOSFETs for High-Speed Switching Application. U: 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO) doi:10.23919/mipro52101.2021.9597068.
@article{article, author = {Bogdanovi\'{c}, Filip and Osre\v{c}ki, \v{Z}eljko and \v{Z}ilak, Josip and Kori\v{c}i\'{c}, Marko and Suligoj, Tomislav}, year = {2021}, pages = {22-27}, DOI = {10.23919/mipro52101.2021.9597068}, keywords = {Horizontal Current Bipolar Transistor (HCBT), Envelope Tracking (ET), wireless communication, power supply modulation, switching amplifier, switching efficency}, doi = {10.23919/mipro52101.2021.9597068}, title = {Comparison of Discrete Bipolar Transistors and MOSFETs for High-Speed Switching Application}, keyword = {Horizontal Current Bipolar Transistor (HCBT), Envelope Tracking (ET), wireless communication, power supply modulation, switching amplifier, switching efficency}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, publisherplace = {Opatija, Hrvatska} }
@article{article, author = {Bogdanovi\'{c}, Filip and Osre\v{c}ki, \v{Z}eljko and \v{Z}ilak, Josip and Kori\v{c}i\'{c}, Marko and Suligoj, Tomislav}, year = {2021}, pages = {22-27}, DOI = {10.23919/mipro52101.2021.9597068}, keywords = {Horizontal Current Bipolar Transistor (HCBT), Envelope Tracking (ET), wireless communication, power supply modulation, switching amplifier, switching efficency}, doi = {10.23919/mipro52101.2021.9597068}, title = {Comparison of Discrete Bipolar Transistors and MOSFETs for High-Speed Switching Application}, keyword = {Horizontal Current Bipolar Transistor (HCBT), Envelope Tracking (ET), wireless communication, power supply modulation, switching amplifier, switching efficency}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, publisherplace = {Opatija, Hrvatska} }

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