Pregled bibliografske jedinice broj: 1161081
Electrical transport and magnetic dynamics in M-type hexaferrites
Electrical transport and magnetic dynamics in M-type hexaferrites // Solid-State Science & Research Meeting Book of abstracts / Biliškov, Nikola ; Brekalo, Ivana ; Martinez, Valentina ; (ur.).
Zagreb, 2021. str. 57-57 (poster, podatak o recenziji nije dostupan, sažetak, znanstveni)
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Naslov
Electrical transport and magnetic dynamics in M-type hexaferrites
Autori
Kisiček, Virna ; Rapljenović, Željko ; Novosel, Nikolina ; Dominko, Damir ; Gongora, David Rivas ; Drobac, Đuro ; Prester, Mladen ; Vinnik, Denis A. ; Alyabyeva, Liudmila N ; Gorshunov, Boris P. ; Ivek, Tomislav ;
Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni
Izvornik
Solid-State Science & Research Meeting Book of abstracts
/ Biliškov, Nikola ; Brekalo, Ivana ; Martinez, Valentina ; - Zagreb, 2021, 57-57
ISBN
978-953-7941-35-2
Skup
Solid-State Science & Research 2021 (SCIRES2021)
Mjesto i datum
Zagreb, Hrvatska, 10.06.2021. - 11.06.2021
Vrsta sudjelovanja
Poster
Vrsta recenzije
Podatak o recenziji nije dostupan
Ključne riječi
hexaferrites, ferrimagnets, semiconductors, ac susceptibility, dc transport
Sažetak
Hexaferrites are a class of iron compounds which crystalize in a sandwich-like periodic stacking of iron-oxide layers containing different metal atoms. The simplest is the M-type with chemical formula AB12O19, where A = Ba, Pb ... and B = Fe, Ti ... [1] Our recent research [2, 4] on various substitutions within the M-type hexaferrite has shown signatures of exotic phenomena which point toward a general relaxational mechanism in ferrimagnetic semiconductors. Frequency - dependent magnetic susceptibility (Fig. 1) and dc electric transport properties of three different compositions of hexaferrite Ba1−xPbxFe12−yAlyO19 show a correlation between activation energies which persists in the whole researched range of aluminum substitution x = 0 to 3.3. This result is discussed in the context of charged magnetic domain walls, the pinning of which is determined by charge carriers activated over the transport gap.
Izvorni jezik
Engleski
Znanstvena područja
Fizika