Naslov
Versatile BiCMOS Technology Platform for the Low-cost Integration of Multi-purpose Applications

Autori
Suligoj, Tomislav ; Žilak, Josip ; Osrečki, Željko ; Koričić, Marko

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
2021 IEEE Latin America Electron Devices Conference (LAEDC) / - : Institute of Electrical and Electronics Engineers (IEEE), 2021, 1-4

ISBN
978-1-6654-1510-1

Skup
2021 IEEE Latin America Electron Devices Conference (LAEDC 2021)

Mjesto i datum
Meksiko, 19.04.2021. - 21.04.2021

Vrsta sudjelovanja
Pozvano predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Horizontal Current Bipolar Transistor, Lateral bipolar transistors, low noise amplifier, radio-frequency power amplifier, silicon-germanium heterojunction bipolar transistor

Sažetak
Integration of Horizontal Current Bipolar Transistor (HCBT) with CMOS requires fewer additional fabrication steps as compared to vertical-current bipolar devices having state-of-the-art electrical characteristics both in demonstrated implanted-base technology and in simulated SiGe-base technology. HCBT’s noise characteristics and large-signal performance for RF applications is tuned by the collector region design and the optimum device for each application is identified and characterized. High-voltage transistors are demonstrated in HCBT technology with BVCEO from 2.8 V to above 70 V enabling the integration RF and power management and other high-voltage circuits. The HCBT with SiGe base exhibits a potential of further improving the highest-performance vertical-current SiGe HBTs and overcoming their integration limitations with CMOS due to geometrical and material incompatibility.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

POVEZANOST RADA