Pregled bibliografske jedinice broj: 1138218
M center in 4H-SiC is a carbon self-interstitial
M center in 4H-SiC is a carbon self-interstitial // Physical review. B., 103 (2021), 180102, 4 doi:10.1103/PhysRevB.103.L180102 (međunarodna recenzija, pismo, znanstveni)
CROSBI ID: 1138218 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
M center in 4H-SiC is a carbon self-interstitial
Autori
Coutinho, J ; Gouveia, J.D. ; Makino, T. ; Ohshima, T. ; Pastuović, Željko ; Bakrač, Luka ; Brodar, Tomislav ; Capan, Ivana
Izvornik
Physical review. B. (2469-9950) 103
(2021);
180102, 4
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, pismo, znanstveni
Ključne riječi
Defects ; Wide band gap semiconductors ; Deep level transient spectroscopy ;
Sažetak
The list of semiconductor materials with spectroscopically fingerprinted self-interstitials is very short. The M center in 4H-SiC, a bistable defect responsible for a family of electron traps, has been deprived of a model which could unveil its real importance for almost two decades. Using advanced first-principles calculations and junction spectroscopy, we demonstrate that the properties of M, including bistability, annealing, reconfiguration kinetics, and electronic levels match those of the carbon self-interstitial.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Projekti:
NATO-SFP-5674 - Enhancing Security at Borders and Ports (E-Sicure 2) (Capan, Ivana, NATO ) ( CroRIS)
Ustanove:
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
- Nature Index
