Pregled bibliografske jedinice broj: 112986
Neutron Irradiation Induced Defects in Silicon
Neutron Irradiation Induced Defects in Silicon // Proceedings of "Physics of Group IV Semiconductors" / Jones, R. ; Freeman, J. (ur.).
Exeter: University of Exxeter, 2003. str. 45-45 (poster, međunarodna recenzija, sažetak, znanstveni)
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Naslov
Neutron Irradiation Induced Defects in Silicon
Autori
Kovačević, Ivana ; Pivac, Branko ; Markevich, Vladimir ; Peaker, Tony
Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni
Izvornik
Proceedings of "Physics of Group IV Semiconductors"
/ Jones, R. ; Freeman, J. - Exeter : University of Exxeter, 2003, 45-45
Skup
The Physics of Group IV Semiconductors
Mjesto i datum
Exeter, Ujedinjeno Kraljevstvo, 07.04.2003. - 10.04.2003
Vrsta sudjelovanja
Poster
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
silicij; neutroni; klasteri
(silicon; neutrons; clusters)
Sažetak
We present a study of defects states occurring in n-type (110) Czochralski-grown silicon after high dose (1×1016 cm-2) irradiation with fast neutrons and one hour isochronal annealing in N2 from 500 °C to 700 °C with 50 °C steps.Deep-level transient spectroscopy (DLTS) measurements were used to identify the electrical active defects. We have observed several peaks at 500 °C. Two of them with activaction energies around 0.36 eV were wider than typical for point defects. These peaks were associated with small interstitial clusters. What we have observed upon annealing at 600 °C is that defects concentration is reduced. All defects anneal out at 650 °C and than upon 700 °C very wide peak is observed. We belive that this defect is associated with {311} rod-like extended defects
Izvorni jezik
Engleski
Znanstvena područja
Fizika
