Naslov
IBIC studies of oxygen doped polycrystalline silicon

Autori
Pivac, Branko ; Borjanović, Vesna ; Jakšić, Milko ; Pastuović, Željko ; Zulim, Ivan

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Izvornik
2nd aSiNet Workshop on Thin Silicon and 9th Euroregional Workshop on Thin Silicon Devices, Book of Abstracts / Shubert, Markus B. ; Conde, Joao P. - Lisabon : Instituto Superior Técnico, 2003

Skup
2nd aSiNet Workshop on Thin Silicon and 9th Euroregional Workshop on Thin Silicon Devices

Mjesto i datum
Lisabon, Portugal, 19.02.2003. - 21.02.2003

Vrsta sudjelovanja
Poster

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
poly-Si; oxygen; defects; IBIC

Sažetak
Ion beam induced charge (IBIC) collection technique can provide interesting and straightforward information about the semiconducting materials and different electronic device characteristics. This nuclear microprobe technique was used for the qualitative analysis of charge collection efficiency spatial distribution in several types of poly-Si material. We studied the influence of light impurities (oxygen, carbon) present in material on electrical activity of extended defects. It is shown that oxygen segregating close to structural defects influences their electrical activity, while for carbon we did not observe the same effect. We demonstrated that IBICC technique could be applied to provide spatial information about the position of electrically active defects, and/or their activation or deactivation during subsequent processing.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Elektrotehnika

POVEZANOST RADA