Naslov
Structural changes in amorphous silicon at low temperatures

Autori
Pivac, Branko ; Dubček, Pavo ; Kovačević, Ivana ; Bernstorff, Sigrid ; Zulim, Ivan ;

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Izvornik
2nd aSiNet Workshop on Thin Silicon and 9th Euroregional Workshop on Thin Silicon Devices, Book of Abstracts / Shubert, Markus B. ; Conde, Joao P. - Lisabon : Instituto Superior Técnico, 2003

Skup
2nd aSiNet Workshop on Thin Silicon and 9th Euroregional Workshop on Thin Silicon Devices

Mjesto i datum
Lisabon, Portugal, 19.02.2003. - 21.02.2003

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Domaća recenzija

Ključne riječi
amorphous silicon; defects; SAXS; FTIR

Sažetak
In order to stabilize characteristics of a-Si solar cells, devices are exposed to the light soaking (aging) accompanied by low temperature annealing. We used FTIR, X-ray reflectivity and SAXS analysis to monitor the structural changes occurring during the low temperature annealing of undoped a-Si:H films. FTIR results show that hydrogen is moved from positions (voids) where it was accumulated unbonded to silicon and it was trapped at dangling bonds. SAXS measurements confirmed the existence of the voids of about 2.5 nm in diameter. Hydrogen removal from the voids was confirmed by SAXS and X-ray reflectivity measurements showing that this treatment influenced their size and redistribution.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Elektrotehnika

POVEZANOST RADA