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Pregled bibliografske jedinice broj: 1119383

PureB diode fabrication using physical or chemical vapor deposition methods for increased back-end-of-line accessibility

Thammaiah, Shivakumar D.; Liu, Xingyu; Knežević, Tihomir; Batenburg, Kevin M.; Aarnink, A.A.I.; Nanver, Lis K.
PureB diode fabrication using physical or chemical vapor deposition methods for increased back-end-of-line accessibility // Solid-State Electronics, 177 (2021), 107938, 10 doi:10.1016/j.sse.2020.107938 (međunarodna recenzija, članak, znanstveni)

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Naslov
PureB diode fabrication using physical or chemical vapor deposition methods for increased back-end-of-line accessibility

Autori
Thammaiah, Shivakumar D. ; Liu, Xingyu ; Knežević, Tihomir ; Batenburg, Kevin M. ; Aarnink, A.A.I. ; Nanver, Lis K.

Izvornik
Solid-State Electronics (0038-1101) 177 (2021); 107938, 10

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Batch furnace ; Chemical-vapor deposition (CVD) ; Electron-beam-assisted physical-vapor ; Pure boron (PureB) ; Ultra-shallow junctions

Sažetak
Several methods of depositing pure boron (PureB) layers on silicon are examined with respect to their potential for fabricating advanced PureB (photo)diodes with back-end-of- line (BEOL) CMOS compatibility. PureB devices were fabricated in two different batch furnace chemical-vapor deposition (CVD) systems or by electron-beam-assisted physical-vapor deposition (EBPVD), and their electrical characteristics were found to be comparable to those of devices previously fabricated using single-wafer CVD and molecular beam epitaxy (MBE) systems. For all methods, the material properties of the B-layers and the I-V characteristics of the PureB diodes follow the same temperature dependence over the range 50 °C–400 °C. This was also the case for the EBPVD layers which were deposited at 50 °C and then annealed at higher temperatures, instead of being deposited at these temperatures as for the other methods. At 400 °C, the ability to achieve an optimal suppression of the electron injection into the PureB anode regions, corresponding to an electron current density of ∼20 pA/cm2, was verified for all methods. The advantages and disadvantages of each deposition method is evaluated with respect to equipment availability, B-layer selectivity, conformality, and thickness control. The batch furnace systems could be attractive for high- volume production, but hardware improvements as discussed here would be needed to reduce the effects of gas depletion. On all points except conformality, EBPVD appears to be a very good option for fabricating nm-thin B-layers suitable for fabricating high-performance 400 °C PureB diodes.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA

Projekti:
HRZZ-IP-2018-01-5296 - Nova generacija poluvodičkih elemenata i integriranih sklopova za eru Interneta stvari (NexGenSemi) (Suligoj, Tomislav, HRZZ ) ( CroRIS)

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Tihomir Knežević (autor)

Poveznice na cjeloviti tekst rada:

doi

Citiraj ovu publikaciju:

Thammaiah, Shivakumar D.; Liu, Xingyu; Knežević, Tihomir; Batenburg, Kevin M.; Aarnink, A.A.I.; Nanver, Lis K.
PureB diode fabrication using physical or chemical vapor deposition methods for increased back-end-of-line accessibility // Solid-State Electronics, 177 (2021), 107938, 10 doi:10.1016/j.sse.2020.107938 (međunarodna recenzija, članak, znanstveni)
Thammaiah, S., Liu, X., Knežević, T., Batenburg, K., Aarnink, A. & Nanver, L. (2021) PureB diode fabrication using physical or chemical vapor deposition methods for increased back-end-of-line accessibility. Solid-State Electronics, 177, 107938, 10 doi:10.1016/j.sse.2020.107938.
@article{article, author = {Thammaiah, Shivakumar D. and Liu, Xingyu and Kne\v{z}evi\'{c}, Tihomir and Batenburg, Kevin M. and Aarnink, A.A.I. and Nanver, Lis K.}, year = {2021}, pages = {10}, DOI = {10.1016/j.sse.2020.107938}, chapter = {107938}, keywords = {Batch furnace, Chemical-vapor deposition (CVD), Electron-beam-assisted physical-vapor, Pure boron (PureB), Ultra-shallow junctions}, journal = {Solid-State Electronics}, doi = {10.1016/j.sse.2020.107938}, volume = {177}, issn = {0038-1101}, title = {PureB diode fabrication using physical or chemical vapor deposition methods for increased back-end-of-line accessibility}, keyword = {Batch furnace, Chemical-vapor deposition (CVD), Electron-beam-assisted physical-vapor, Pure boron (PureB), Ultra-shallow junctions}, chapternumber = {107938} }
@article{article, author = {Thammaiah, Shivakumar D. and Liu, Xingyu and Kne\v{z}evi\'{c}, Tihomir and Batenburg, Kevin M. and Aarnink, A.A.I. and Nanver, Lis K.}, year = {2021}, pages = {10}, DOI = {10.1016/j.sse.2020.107938}, chapter = {107938}, keywords = {Batch furnace, Chemical-vapor deposition (CVD), Electron-beam-assisted physical-vapor, Pure boron (PureB), Ultra-shallow junctions}, journal = {Solid-State Electronics}, doi = {10.1016/j.sse.2020.107938}, volume = {177}, issn = {0038-1101}, title = {PureB diode fabrication using physical or chemical vapor deposition methods for increased back-end-of-line accessibility}, keyword = {Batch furnace, Chemical-vapor deposition (CVD), Electron-beam-assisted physical-vapor, Pure boron (PureB), Ultra-shallow junctions}, chapternumber = {107938} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus

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