Naslov
The Influence Of Hydrogenation On The Effective Lifetime Of Silicon Wafers: Peculiarities At Low-Temperature Treatments

Autori
Ulyashin, Alexander ; Scherff, Maximilian ; Kozicki, Alexander ; Job, Reinhart ; Fahrner, Wolfgang ; Bilyalov, Renat ; Matić, Zdeslav ; Poortmans, Jef

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
PV in Europe - From PV Technology to Energy Solutions, 7-11 October 2002, Rome, Italy / J.-L. Bal, G. Silvestrini, A. Grassi, W. Palz, R. Vigotti, M. Gamberale, P. Helm - München : WIP-Munich, Sylvensteinstr. 2, D-81369 München, 2003, 103.-106.

Skup
PV in Europe - From PV Technology to Energy Solutions, 7-11 October 2002, Rome, Italy

Mjesto i datum
Rim, Italija, 07.10.2003. - 11.10.2003

Vrsta sudjelovanja
Poster

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Lifetime; Silicon; Passivation

Sažetak
The influence of hydrogenation and/or heat treatments at temperatures below 450°C on the effective lifetime (&#964 ; ; ) of silicon wafers (FZ, CZ, Baysix, EFG) was investigated. The hydrogen insertion into the silicon was done either by a wet chemical etching or by a plasma. Two process routes for the hydrogenation by a plasma are discussed: (1) a one step process, where the hydrogenation is done at 400°C ; (2) a two step process, where the annealing at 450°C is applied after a plasma treatment at 250 °C. The lifetime measurements have been performed in a &micro ; ; -PCD mapping system. The hydrogen termination by HF-dip or a thin a-Si:H layer were used for the surface passivation. It is shown that the low temperature (450°C) annealing of Si wafers leads to the increase of the lifetime values for all investigated materials. Penetration of hydrogen at temperatures below 250°C leads to the decrease of the lifetime prior and after the post-hydrogenation heat treatments at 450 °C. It is concluded that the hydrogen interaction with oxygen-related precursors is responsible for this phenomenon. It is supposed that oxygen-related precursors serve as gettering centers for impurities in hydrogen lean Si and they are recombination centers in hydrogen reach material. This phenomenon has to be taken into account for the lowtemperature solar cell processing in addition to the well known hydrogen passivation effects.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

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