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Pregled bibliografske jedinice broj: 1105060

Deep Level Defects in 4H-SiC Epitaxial Layers

Capan, Ivana; Brodar, Tomislav; Ohshima, Takeshi; Sato, Shinichiro; Makino, Takahiro; Pastuovic, Željko; Siegele, Rainer; Snoj, Luka; Radulović, Vadimir; Coutinho, José et al.
Deep Level Defects in 4H-SiC Epitaxial Layers // ICSCRM 2017 - The 2017 International Conference on Silicon Carbide and Related Materials
Washington D.C., Sjedinjene Američke Države: Trans Tech Publications, 2018. str. 225-228 doi:10.4028/www.scientific.net/msf.924.225 (ostalo, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)

CROSBI ID: 1105060 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Deep Level Defects in 4H-SiC Epitaxial Layers

Autori
Capan, Ivana ; Brodar, Tomislav ; Ohshima, Takeshi ; Sato, Shinichiro ; Makino, Takahiro ; Pastuovic, Željko ; Siegele, Rainer ; Snoj, Luka ; Radulović, Vadimir ; Coutinho, José ; Torres, Vitor J.B. ; Demmouche, Kamel

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
ICSCRM 2017 - The 2017 International Conference on Silicon Carbide and Related Materials / - : Trans Tech Publications, 2018, 225-228

Skup
International Conference on Silicon Carbide and Related Materials (ICSCRM 2017)

Mjesto i datum
Washington D.C., Sjedinjene Američke Države, 17.09.2017. - 22.09.2017

Vrsta sudjelovanja
Ostalo

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
4H-SiC ; deep level defects ; neutrons ; ion implantation ; DLTS ; carbon vacancy

Sažetak
We present a study of electrically active radiation-induced defects formed in 4H-SiC epitaxial layers following irradiation with fast neutrons, as well as 600 keV H+ and 2 MeV He++ ion implantations. We also look at electron emission energies and mechanisms of the carbon vacancy in 4H-SiC by means of first- principles modelling. Combining the relative stability of carbon vacancies at different sites with the relative amplitude of the observed Laplace-DLTS peaks, we were able to connect Z1 and Z2 to emissions from double negatively charged carbon vacancies located at the h- and k-sites, respectively.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA

Ustanove:
Institut "Ruđer Bošković", Zagreb

Profili:

Avatar Url Tomislav Brodar (autor)

Avatar Url Željko Pastuović (autor)

Avatar Url Ivana Capan (autor)

Poveznice na cjeloviti tekst rada:

doi www.scientific.net

Citiraj ovu publikaciju:

Capan, Ivana; Brodar, Tomislav; Ohshima, Takeshi; Sato, Shinichiro; Makino, Takahiro; Pastuovic, Željko; Siegele, Rainer; Snoj, Luka; Radulović, Vadimir; Coutinho, José et al.
Deep Level Defects in 4H-SiC Epitaxial Layers // ICSCRM 2017 - The 2017 International Conference on Silicon Carbide and Related Materials
Washington D.C., Sjedinjene Američke Države: Trans Tech Publications, 2018. str. 225-228 doi:10.4028/www.scientific.net/msf.924.225 (ostalo, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Capan, I., Brodar, T., Ohshima, T., Sato, S., Makino, T., Pastuovic, Ž., Siegele, R., Snoj, L., Radulović, V. & Coutinho, J. (2018) Deep Level Defects in 4H-SiC Epitaxial Layers. U: ICSCRM 2017 - The 2017 International Conference on Silicon Carbide and Related Materials doi:10.4028/www.scientific.net/msf.924.225.
@article{article, author = {Capan, Ivana and Brodar, Tomislav and Ohshima, Takeshi and Sato, Shinichiro and Makino, Takahiro and Pastuovic, \v{Z}eljko and Siegele, Rainer and Snoj, Luka and Radulovi\'{c}, Vadimir and Coutinho, Jos\'{e} and Torres, Vitor J.B. and Demmouche, Kamel}, year = {2018}, pages = {225-228}, DOI = {10.4028/www.scientific.net/msf.924.225}, keywords = {4H-SiC, deep level defects, neutrons, ion implantation, DLTS, carbon vacancy}, doi = {10.4028/www.scientific.net/msf.924.225}, title = {Deep Level Defects in 4H-SiC Epitaxial Layers}, keyword = {4H-SiC, deep level defects, neutrons, ion implantation, DLTS, carbon vacancy}, publisher = {Trans Tech Publications}, publisherplace = {Washington D.C., Sjedinjene Ameri\v{c}ke Dr\v{z}ave} }
@article{article, author = {Capan, Ivana and Brodar, Tomislav and Ohshima, Takeshi and Sato, Shinichiro and Makino, Takahiro and Pastuovic, \v{Z}eljko and Siegele, Rainer and Snoj, Luka and Radulovi\'{c}, Vadimir and Coutinho, Jos\'{e} and Torres, Vitor J.B. and Demmouche, Kamel}, year = {2018}, pages = {225-228}, DOI = {10.4028/www.scientific.net/msf.924.225}, keywords = {4H-SiC, deep level defects, neutrons, ion implantation, DLTS, carbon vacancy}, doi = {10.4028/www.scientific.net/msf.924.225}, title = {Deep Level Defects in 4H-SiC Epitaxial Layers}, keyword = {4H-SiC, deep level defects, neutrons, ion implantation, DLTS, carbon vacancy}, publisher = {Trans Tech Publications}, publisherplace = {Washington D.C., Sjedinjene Ameri\v{c}ke Dr\v{z}ave} }

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