Pregled bibliografske jedinice broj: 1102863
Impact of Large-signal Operation on DC Operating Point of Horizontal Current Bipolar Transistor
Impact of Large-signal Operation on DC Operating Point of Horizontal Current Bipolar Transistor // IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS 2020)
Monterey (CA), Sjedinjene Američke Države, 2020. str. 1-4 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
Impact of Large-signal Operation on DC Operating
Point of Horizontal Current Bipolar Transistor
Autori
Osrečki, Željko ; Žilak, Josip ; Koričić, Marko ; Suligoj, Tomislav
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Skup
IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS 2020)
Mjesto i datum
Monterey (CA), Sjedinjene Američke Države, 05.12.2020. - 08.12.2020
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
Horizontal Current Bipolar Transistor (HCBT), large-signal, power amplifier (PA)
Sažetak
The impact of bias configuration on DC operating point in large-signal operation is analyzed for Horizontal Current Bipolar Transistor (HCBT) by time-domain load-pull measurements at 2.4 GHz. The two limiting cases, constant base-emitter voltage (c-VBE) and constant base current (c-IB), are investigated with respect to where the hard- limitation occurs, in the cut-off or saturation region. For the two cases, it is found that the linear operating range, in which the gain is flat, heavily depends on the hard-limitation type present. Additionally, operation above open-base breakdown voltage shows sharp decrease of DC collector current of 23 mA near compression point for c- IB bias. Finally, the c-VBE bias shows around 5% higher collector efficiency in the back-off range while targeting the same output power in 1-dB compression point.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
HRZZ-IP-2018-01-5296 - Nova generacija poluvodičkih elemenata i integriranih sklopova za eru Interneta stvari (NexGenSemi) (Suligoj, Tomislav, HRZZ ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb