Naslov
In situ istraživanje termičkog raspada epitaksijalnih slojeva GeSn legure transkisijskom elektronskom mikroskopijom
(In situ transmission electron microscopy investigation of the decomposition of the epitaxial GeSn layers)

Autori
Šantić, Natalija

Vrsta, podvrsta i kategorija rada
Ocjenski radovi, diplomski rad

Fakultet
Odjel za kemiju

Mjesto
Osijek

Datum
24.11

Godina
2020

Stranica
78

Mentor
Balić, Tomislav ; Groiss, Heiko

Ključne riječi
focused ion beam / in situexperiment / MEMS chip / sample preparation/ transmission electron microscopy/ wedge polishing

Sažetak
The Ge1−xSnx alloy with x>0.01 is thermodynamically metastable and Sn tends to diffuse, segregate or precipitate as β-Sn in a droplet-like structure at temperature above ≈230°C. In situ heating experiments via transmission electron microscopy (TEM) allows us to observe and study the decomposition process of Ge1−xSnx. The main requirement for TEM investigation is an electron transparent specimen. Hence, specimen preparation is a key step towards TEM experiments. The sample preparation procedure has been developed using a combination of preparation techniques. The MBE synthesized Ge1−xSnx and reference material Si (with Ge quantum dots) have been prepared with wedge polishing technique. Further, focused ion beam (FIB) has been used to prepare a heating chip for the in situ TEM heating experiment. Various microscopy methods have been used to optimize and validate the developed sample preparation procedure.

Izvorni jezik
Engleski

Znanstvena područja
Kemija

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