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Pregled bibliografske jedinice broj: 1089890

Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes

Capan, Ivana; Yamazaki, Yuichi; Oki, Yuya; Brodar, Tomislav; Makino, Takahiro; Ohshima, Takeshi
Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes // Crystals, 9 (2019), 7; 328, 7 doi:10.3390/cryst9070328 (međunarodna recenzija, članak, znanstveni)

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Naslov
Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes

Autori
Capan, Ivana ; Yamazaki, Yuichi ; Oki, Yuya ; Brodar, Tomislav ; Makino, Takahiro ; Ohshima, Takeshi

Izvornik
Crystals (2073-4352) 9 (2019), 7; 328, 7

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
minority traps ; defects ; silicon carbide ; MCTS ; SBD

Sažetak
We present preliminary results on minority carrier traps in as-grown n-type 4H–SiC Schottky barrier diodes. The minority carrier traps are crucial for charge trapping and recombination processes. In this study, minority carrier traps were investigated by means of minority carrier transient spectroscopy (MCTS) and high-resolution Laplace-MCTS measurements. A single minority carrier trap with its energy level position at Ev + 0.28 eV was detected and assigned to boron- related defects.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA

Ustanove:
Institut "Ruđer Bošković", Zagreb

Profili:

Avatar Url Tomislav Brodar (autor)

Avatar Url Ivana Capan (autor)

Poveznice na cjeloviti tekst rada:

doi www.mdpi.com fulir.irb.hr

Citiraj ovu publikaciju:

Capan, Ivana; Yamazaki, Yuichi; Oki, Yuya; Brodar, Tomislav; Makino, Takahiro; Ohshima, Takeshi
Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes // Crystals, 9 (2019), 7; 328, 7 doi:10.3390/cryst9070328 (međunarodna recenzija, članak, znanstveni)
Capan, I., Yamazaki, Y., Oki, Y., Brodar, T., Makino, T. & Ohshima, T. (2019) Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes. Crystals, 9 (7), 328, 7 doi:10.3390/cryst9070328.
@article{article, author = {Capan, Ivana and Yamazaki, Yuichi and Oki, Yuya and Brodar, Tomislav and Makino, Takahiro and Ohshima, Takeshi}, year = {2019}, pages = {7}, DOI = {10.3390/cryst9070328}, chapter = {328}, keywords = {minority traps, defects, silicon carbide, MCTS, SBD}, journal = {Crystals}, doi = {10.3390/cryst9070328}, volume = {9}, number = {7}, issn = {2073-4352}, title = {Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes}, keyword = {minority traps, defects, silicon carbide, MCTS, SBD}, chapternumber = {328} }
@article{article, author = {Capan, Ivana and Yamazaki, Yuichi and Oki, Yuya and Brodar, Tomislav and Makino, Takahiro and Ohshima, Takeshi}, year = {2019}, pages = {7}, DOI = {10.3390/cryst9070328}, chapter = {328}, keywords = {minority traps, defects, silicon carbide, MCTS, SBD}, journal = {Crystals}, doi = {10.3390/cryst9070328}, volume = {9}, number = {7}, issn = {2073-4352}, title = {Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes}, keyword = {minority traps, defects, silicon carbide, MCTS, SBD}, chapternumber = {328} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus

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