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Pregled bibliografske jedinice broj: 1089884

Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC

Capan, Ivana; Brodar, Tomislav; Yamazaki, Yuichi; Oki, Yuya; Ohshima, Takeshi; Chiba, Yoji; Hijikata, Yasuto; Snoj, Luka; Radulović, Vladimir
Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 478 (2020), 224-228 doi:10.1016/j.nimb.2020.07.005 (međunarodna recenzija, članak, znanstveni)

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Naslov
Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC

Autori
Capan, Ivana ; Brodar, Tomislav ; Yamazaki, Yuichi ; Oki, Yuya ; Ohshima, Takeshi ; Chiba, Yoji ; Hijikata, Yasuto ; Snoj, Luka ; Radulović, Vladimir

Izvornik
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (0168-583X) 478 (2020); 224-228

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Silicon carbide ; defects ; boron ; minority carriers ; neutron radiation

Sažetak
We report on influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC. Together with the increase of the well-known carbon vacancy (VC) majority carrier related trap, neutron irradiation has introduced two deep traps, labeled as EH1 and EH3 with the activation energies for electron emission estimated as 0.4 and 0.7 eV bellow the conduction band, respectively. Based on Laplace deep level transient spectroscopy (DLTS) results, we have assigned EH1 trap to silicon vacancy (VSi). Two minority carrier traps labelled as B and D- center were detected by minority transient spectroscopy (MCTS) and assigned to substitutional boron BSi and BC, respectively. Activation energies for hole emission for B and D-center are estimated as 0.27 and 0.60 eV above the valence band, respectively. We have identified two emission lines for D-center by Laplace-MCTS measurements and assigned them to BC sitting at hexagonal (−h) and cubic (−k) lattice sites.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA

Ustanove:
Institut "Ruđer Bošković", Zagreb

Profili:

Avatar Url Tomislav Brodar (autor)

Avatar Url Ivana Capan (autor)

Poveznice na cjeloviti tekst rada:

doi www.sciencedirect.com doi.org

Citiraj ovu publikaciju:

Capan, Ivana; Brodar, Tomislav; Yamazaki, Yuichi; Oki, Yuya; Ohshima, Takeshi; Chiba, Yoji; Hijikata, Yasuto; Snoj, Luka; Radulović, Vladimir
Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 478 (2020), 224-228 doi:10.1016/j.nimb.2020.07.005 (međunarodna recenzija, članak, znanstveni)
Capan, I., Brodar, T., Yamazaki, Y., Oki, Y., Ohshima, T., Chiba, Y., Hijikata, Y., Snoj, L. & Radulović, V. (2020) Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 478, 224-228 doi:10.1016/j.nimb.2020.07.005.
@article{article, author = {Capan, Ivana and Brodar, Tomislav and Yamazaki, Yuichi and Oki, Yuya and Ohshima, Takeshi and Chiba, Yoji and Hijikata, Yasuto and Snoj, Luka and Radulovi\'{c}, Vladimir}, year = {2020}, pages = {224-228}, DOI = {10.1016/j.nimb.2020.07.005}, keywords = {Silicon carbide, defects, boron, minority carriers, neutron radiation}, journal = {Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms}, doi = {10.1016/j.nimb.2020.07.005}, volume = {478}, issn = {0168-583X}, title = {Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC}, keyword = {Silicon carbide, defects, boron, minority carriers, neutron radiation} }
@article{article, author = {Capan, Ivana and Brodar, Tomislav and Yamazaki, Yuichi and Oki, Yuya and Ohshima, Takeshi and Chiba, Yoji and Hijikata, Yasuto and Snoj, Luka and Radulovi\'{c}, Vladimir}, year = {2020}, pages = {224-228}, DOI = {10.1016/j.nimb.2020.07.005}, keywords = {Silicon carbide, defects, boron, minority carriers, neutron radiation}, journal = {Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms}, doi = {10.1016/j.nimb.2020.07.005}, volume = {478}, issn = {0168-583X}, title = {Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC}, keyword = {Silicon carbide, defects, boron, minority carriers, neutron radiation} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus

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