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Pregled bibliografske jedinice broj: 1089663

Investigation of light-emission and avalanche- current mechanisms in PureB SPAD devices


Nanver, Lis K.; Krakers, Max; Knezevic, Tihomir; Karavidas, A.; Agarwal, Vishal; Hueting, Ray; Dutta, Satadal; Boturchuk, Ievgen; Annema, Anne-Johan
Investigation of light-emission and avalanche- current mechanisms in PureB SPAD devices // Proceedings Volume 11043, Fifth Conference on Sensors, MEMS, and Electro-Optic Systems
Skukuza, Južnoafrička Republika: SPIE, 2019. 1104306, 14 doi:10.1117/12.2501598 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), ostalo)


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Naslov
Investigation of light-emission and avalanche- current mechanisms in PureB SPAD devices

Autori
Nanver, Lis K. ; Krakers, Max ; Knezevic, Tihomir ; Karavidas, A. ; Agarwal, Vishal ; Hueting, Ray ; Dutta, Satadal ; Boturchuk, Ievgen ; Annema, Anne-Johan

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), ostalo

Izvornik
Proceedings Volume 11043, Fifth Conference on Sensors, MEMS, and Electro-Optic Systems / - : SPIE, 2019

Skup
Fifth Conference on Sensors, MEMS, and Electro-Optic Systems

Mjesto i datum
Skukuza, Južnoafrička Republika, 08.10.2018. - 10.10.2018

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
avalanche breakdown, defects, light-emitting diode (LED), Pure boron, silicon, single-photon avalanche diode (SPAD)

Sažetak
The light emission from silicon PureB photodiodes was investigated in both forward- and avalanchemode operation and correlated to the presence of process-dependent defects that influence the reverse IV characteristics. As opposed to “defect-free” diodes with low dark currents and abrupt breakdown behavior, the diodes with defects had higher current levels and light-emitting spots appearing at voltages far below the breakdown voltage otherwise set by the implemented doping profiles. The role of such defect-related behavior for the application of the photodiodes as single-photon avalanche diodes (SPADs) and avalanche-mode light-emitting diodes (AMLEDs) is assessed in connection with the recent demonstration of these basic devices as both the light-emitting and light-detecting elements in optocoupler circuits integrated in CMOS for data transmission purposes.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA


Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Tihomir Knežević (autor)

Poveznice na cjeloviti tekst rada:

doi

Citiraj ovu publikaciju:

Nanver, Lis K.; Krakers, Max; Knezevic, Tihomir; Karavidas, A.; Agarwal, Vishal; Hueting, Ray; Dutta, Satadal; Boturchuk, Ievgen; Annema, Anne-Johan
Investigation of light-emission and avalanche- current mechanisms in PureB SPAD devices // Proceedings Volume 11043, Fifth Conference on Sensors, MEMS, and Electro-Optic Systems
Skukuza, Južnoafrička Republika: SPIE, 2019. 1104306, 14 doi:10.1117/12.2501598 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), ostalo)
Nanver, L., Krakers, M., Knezevic, T., Karavidas, A., Agarwal, V., Hueting, R., Dutta, S., Boturchuk, I. & Annema, A. (2019) Investigation of light-emission and avalanche- current mechanisms in PureB SPAD devices. U: Proceedings Volume 11043, Fifth Conference on Sensors, MEMS, and Electro-Optic Systems doi:10.1117/12.2501598.
@article{article, author = {Nanver, Lis K. and Krakers, Max and Knezevic, Tihomir and Karavidas, A. and Agarwal, Vishal and Hueting, Ray and Dutta, Satadal and Boturchuk, Ievgen and Annema, Anne-Johan}, year = {2019}, pages = {14}, DOI = {10.1117/12.2501598}, chapter = {1104306}, keywords = {avalanche breakdown, defects, light-emitting diode (LED), Pure boron, silicon, single-photon avalanche diode (SPAD)}, doi = {10.1117/12.2501598}, title = {Investigation of light-emission and avalanche- current mechanisms in PureB SPAD devices}, keyword = {avalanche breakdown, defects, light-emitting diode (LED), Pure boron, silicon, single-photon avalanche diode (SPAD)}, publisher = {SPIE}, publisherplace = {Skukuza, Ju\v{z}noafri\v{c}ka Republika}, chapternumber = {1104306} }
@article{article, author = {Nanver, Lis K. and Krakers, Max and Knezevic, Tihomir and Karavidas, A. and Agarwal, Vishal and Hueting, Ray and Dutta, Satadal and Boturchuk, Ievgen and Annema, Anne-Johan}, year = {2019}, pages = {14}, DOI = {10.1117/12.2501598}, chapter = {1104306}, keywords = {avalanche breakdown, defects, light-emitting diode (LED), Pure boron, silicon, single-photon avalanche diode (SPAD)}, doi = {10.1117/12.2501598}, title = {Investigation of light-emission and avalanche- current mechanisms in PureB SPAD devices}, keyword = {avalanche breakdown, defects, light-emitting diode (LED), Pure boron, silicon, single-photon avalanche diode (SPAD)}, publisher = {SPIE}, publisherplace = {Skukuza, Ju\v{z}noafri\v{c}ka Republika}, chapternumber = {1104306} }

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